Resistance switching behavior of ZnO resistive random access memory with a reduced graphene oxide capping layer

Abstract

In this work, we investigate the characteristics of ZnO resistive random access memory (RRAM) with a reduced graphene oxide (rGO) capping layer and the polarity effect of the SET/RESET bias on the RRAM. The rGO film insertion enhances the stability of the current–voltage (I–V) switching curve and the superior resistance ratio (∼105) of high-resistance state (HRS) to low-resistance state (LRS). Using the appropriate polarity of the SET/RESET bias applied to the rGO-capped ZnO RRAM enables the oxygen ions to move mainly at the interface of the rGO and ZnO films, resulting in the best performance. Presumably, the rGO film acts as an oxygen reservoir and enhances the easy in and out motion of the oxygen ions from the rGO film. The rGO film also prevents the interaction of oxygen ions and the Al electrode, resulting in excellent performance. In a pulse endurance test, the rGO-capped ZnO RRAM reveals superior endurance of up to 108 cycles over that of the ZnO RRAM without rGO insertion (106 cycles).

Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

“…The reduced graphene oxide solution was prepared by the Graphage company (Model S-ON10). [15][16][17] N-methyl pyrrolidone (NMP) was the solvent for reduced graphene oxide, solid content was 5%wt, and viscosity was 1000-1500. To incorporate different amounts of reduced graphene oxide into the seed layer solution, the 10 ml seed layer solutions were added with 0, 1, 5, and 9 portions (one portion is 0.1 ml in volume) of reduced graphene oxide into the solution.…”

Photo-Response of Functionalized Self-Assembled Graphene Oxide on Zinc Oxide Heterostructure to UV Illumination

“…In the open literatures, there are some attempts to introduce GR-ZnO nano-composites, ZnO nanowires, GR arrays/films [ 30 , 31 ], GR-ZnO nanorods [ 32 , 33 ], and GR wrapped to hollow ZnO spheres [ 34 ]. Moreover, resistance switching of GR to ZnO as a resistive random access memory was reported [ 35 ]. However, the reports on the assembly of GO on ZnO films and the application of GO/ZnO heterostructure in UV sensing are still quite rare.…”

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

“…Therefore, rGO can store oxygen that is needed for the switching of RRAM devices. It was confirmed in [219] that proposed a ZnO-based RRAM structure with a thin rGO coating layer of 13 nm. The insertion of the rGO was revealed to enhance the crystallinity and boost the device switching dynamics [215], [220], [221].…”