Background: Colorectal cancer (CRC), which has become especially prevalent in developed countries, is currently the third highest cause of cancer mortality in Taiwan. Mutation of the adenomatous polyposis coli (APC) gene, a tumour suppressor, is thought to be an early event in colorectal tumourigenesis. To date, however, no large-scale screening for APC gene variants in Chinese subjects has been performed. The present study was undertaken to identify APC gene variants that are significantly associated with the occurrence of CRC in Taiwanese subjects.
In this work, we investigate the characteristics of ZnO resistive random access memory (RRAM) with a reduced graphene oxide (rGO) capping layer and the polarity effect of the SET/RESET bias on the RRAM. The rGO film insertion enhances the stability of the current–voltage (I–V) switching curve and the superior resistance ratio (∼105) of high-resistance state (HRS) to low-resistance state (LRS). Using the appropriate polarity of the SET/RESET bias applied to the rGO-capped ZnO RRAM enables the oxygen ions to move mainly at the interface of the rGO and ZnO films, resulting in the best performance. Presumably, the rGO film acts as an oxygen reservoir and enhances the easy in and out motion of the oxygen ions from the rGO film. The rGO film also prevents the interaction of oxygen ions and the Al electrode, resulting in excellent performance. In a pulse endurance test, the rGO-capped ZnO RRAM reveals superior endurance of up to 108 cycles over that of the ZnO RRAM without rGO insertion (106 cycles).
3D stacked ReRAM is difficult to realize because of the difficulties in bipolar selecting device and the lack of suitable architecture to decode the 2-terminal device for 3D array. In this study, we report a novel self-rectifying WSi x O y ReRAM with good high temperature data retention and read disturb immunity. Rapid thermal oxidation (RTO) of WSi x forms the WSi x O y layer as both the storage node and a rectifying device with the p+ poly electrode. The simple process to achieve this self-rectifying device allows us to incorporate it into a double-density 3D architecture that adopts a regular MOSFET for X-Y decoding. We estimate this device and architecture that can easily provide operation margins for up to 16 layers of 3D ReRAM.
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