Resistance of Plasma-deposited <i>a</i>-C: H/fluorocarbon Films to Anodic Breakdown in Aqueous Electrolytes

Srividya, C.; Sunkara, Mahendra K.; Babu, S. V.

doi:10.1557/jmr.1997.0281

Cited by 11 publications

(5 citation statements)

References 8 publications

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“…Combining backfilling with controlled hydrolysis, as demonstrated with F7/FBZ+F1, enables the preparation of a film with higher overall conversion (87%) while maintaining a hydrophobic/oleophobic surface (Table ). R f and C f derived from an equivalent circuit fit to the EIS spectrum of this film indicate that it does indeed present a greater barrier to ion transport than the other copolymer films (an order of magnitude higher R f than that of F7/FBZ) or any of the homogeneous films prepared previously. , The R f values of films created in this work (up to ∼10 GΩ·cm 2 ) are among the highest of any submicron films reported in the literature and even higher than many films having thicknesses of several microns . These results detail the importance of maintaining a highly hydrophobic surface and minimizing hydrophilic groups throughout to dramatically elevate the resistance of polymer films against ion transfer.…”

Section: Resultssupporting

confidence: 63%

Blocklike Fluorocarbon and Hydrocarbon Copolymer Films via Surface-Initiated ATRP and Postpolymerization Reactions

2005

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We report a new method to prepare ultrathin blocklike copolymer films on metal surfaces with molecularly optimized surface and barrier properties. Copolymer films containing various fluorocarbon and/or hydrocarbon side chains were created by a one-step surface-initiated polymerization of poly-(hydroxyethyl methacrylate) (PHEMA) followed by straightforward derivatization steps. Exposure of PHEMA to perfluorobenzoyl chloride results in a perfluoroaryl-modified PHEMA film that exhibits high conversion and outstanding barrier properties but does not present an oleophobic surface. We have previously demonstrated that fluorinated esters created in this manner may be hydrolyzed back to PHEMA by brief exposure to base. Controlled hydrolysis results in regeneration of PHEMA in the outer surface region that can be subsequently rederivatized with alkyl or fluoroalkyl acid chlorides to create copolymer films with tailored surface composition. Surface properties are solely affected by the species used during rederivatization while barrier properties result from the combined conversion, structuring, and surface properties of the copolymer film.

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Section: Resultssupporting

confidence: 63%

Blocklike Fluorocarbon and Hydrocarbon Copolymer Films via Surface-Initiated ATRP and Postpolymerization Reactions

2005

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“…The details of the corrosion cell and the experimental procedure have been discussed in detail elsewhere. 20,21 A rotating copper disk electrode (3.1 mm in diam) was used as the working electrode. Here again, the working electrode was rotated at 1000 rpm rotational speed to eliminate mass transfer effects.…”

Section: Methodsmentioning

confidence: 99%

Hydroxyl Radical Formation in H[sub 2]O[sub 2]-Amino Acid Mixtures and Chemical Mechanical Polishing of Copper

Hariharaputhiran¹,

Zhang²,

Ramarajan³

et al. 2000

J. Electrochem. Soc.

120

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Chemical mechanical polishing (CMP) has become the key planarization technology in ultralarge scale integration (ULSI) silicon device manufacturing to fabricate sub-quarter-micrometer metal and dielectric lines. [1][2][3][4] In the CMP process, planarization is achieved by polishing a wafer with uneven topography using a colloidal slurry consisting of sub-micrometer sized abrasive particles. The particles are dispersed in an aqueous solution containing various chemicals, which make up the slurry. These chemicals, depending on their identity, play different roles such as oxidizers [Fe(NO 3 ) 3 , (NH 4 )S 2 O 8 , H 2 O 2 ], passivating agents (benzotriazole, benzimidazole), slurry stabilizers [poly(ethylene glycol), arabic gum], etc. While several slurry chemistries are available for Cu CMP and significant progress has been made in utilizing them in manufacturing, very little fundamental information about them is available in the published literature.Copper CMP in a highly acidic pH regime leads to corrosion problems, while Cu CMP in alkaline conditions is faced with an unfavorable polish rate selectivity with respect to SiO 2 , leading to interlayer dielectric (ILD) erosion. Thus, an intermediate pH range 4-7 appears to be a better choice for Cu CMP. 5-7 One of the more attractive slurries in this intermediate pH range consists of hydrogen peroxide, glycine (an amino acid), and an abrasive. Hirabayashi et al. 8,9 demonstrated that slurries containing hydrogen peroxide, glycine, and silica particles (abrasive) can be used for Cu CMP. They successfully fabricated inlaid copper wiring using the damascene process with very little dishing (less than 60 nm in the linewidth range of 0.5-100 m) with the above slurry. The mechanism, as proposed by them, consists of the oxidation of Cu to copper oxide by H 2 O 2 in the recessed region, thereby preventing the dissolution of Cu from the recessed areas of the wafer. The oxide formed in the protruded regions, on the other hand, is removed by the abrasives exposing the underlying metallic Cu surface to the slurry. According to Hirabayashi et al. copper is then converted into Cu(H 2 O) 4 2ϩ by the hydrogen peroxide in the slurry which in turn reacts with glycine (also in the slurry) to form a Cu 2ϩ -glycine chelate that is soluble in water. Thus, while the formation of copper oxide prevents the direct etching of Cu in the low lying regions, Cu in the protruded regions is removed by both direct dissolution as well as by the removal of the oxide formed. However, they did not describe the interaction between the Cu 2ϩ -glycine complex and hydrogen peroxide and its effect on Cu removal or the role of hydroxyl radicals. It has been well established that the decomposition of hydrogen peroxide leads to the formation of hydroxyl radicals (*OH) which are a much stronger oxidizing agent than hydrogen peroxide itself. 10,11 There is also a rich collection of information concerning the catalytic generation of *OH from hydrogen peroxide, with various metal ions and metal ion complexes acting ...

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“…14 Argon addition to the feed gas mixture, however, results in denser films, 24 also confirmed in our case by the density values of 2.6 and 0.95 g/cm 3 measured for the films deposited from argon/ butadiene (4/1) and hydrogen/butadiene (9/1) mixtures, respectively. EIS measurements on these films 25 suggest that films deposited from argon/butadiene (4/1) mixtures were not porous, while those deposited from hydrogen/butadiene (9/1) mixtures were porous enough to allow the electrolyte to reach the metal surface resulting in aluminum dissolution.…”

Section: Resultsmentioning

confidence: 99%

Corrosion Resistance of Diamond-like Carbon-Coated Aluminum Films

Srividya

Babu

1996

Chem. Mater.

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The corrosion characteristics of diamond-like carbon (DLC) films, deposited on aluminum film-covered single-crystal silicon substrates were investigated using standard potentiometric methods. The DLC films were deposited by radio frequency (13.56 MHZ) plasma deposition from three different precursors, methane, acetylene, and 1,3 butadiene, with argon or hydrogen as the diluent. A 5 nm thick polysilicon (PS) film was plasma-deposited prior to DLC film deposition to improve adhesion. The measured corrosion current increased with an increase in the hydrogen content in the feed gas mixture and was lowest for the films deposited from butadiene and highest for those deposited from methane. Also, the DLC films deposited at higher gas flow rates and lower rf powers offered better protection against corrosion than those deposited at lower gas flow rates and higher rf powers. Annealing improved the corrosion resistance. The corrosion currents for certain DLC/PS/Al/Si samples were about 15 times smaller than those for polyimide (PI)/Al/Si samples.

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Resistance of Plasma-deposited a-C: H/fluorocarbon Films to Anodic Breakdown in Aqueous Electrolytes

Cited by 11 publications

References 8 publications

Blocklike Fluorocarbon and Hydrocarbon Copolymer Films via Surface-Initiated ATRP and Postpolymerization Reactions

Blocklike Fluorocarbon and Hydrocarbon Copolymer Films via Surface-Initiated ATRP and Postpolymerization Reactions

Hydroxyl Radical Formation in H[sub 2]O[sub 2]-Amino Acid Mixtures and Chemical Mechanical Polishing of Copper

Corrosion Resistance of Diamond-like Carbon-Coated Aluminum Films

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