Resistance Measurement Platform for Statistical Analysis of Next Generation Memory Materials

A high-precision current measurement platform applied for statistical measurement of discharge current transient spectroscopy of traps in SiN dielectrics

“…The current can be read out at high speed by measuring only a fixed row, which is a similar way to the measurement of a fixed cell in the previous array test circuits. 26,[29][30][31] In the case of measuring the discharge current, in order to achieve high precision, we measured the output signal of each cell 2000 times during one sampling cycle, and its sampling period was about 1 s.…”

“…Toward evaluation of emerging memory materials with high versatility, an array test circuit platform for measuring the resistance of memory materials has been proposed where DUTs are formed on the platform circuit in an additional process with simple steps. [29][30][31] Based on the same concept of the array test circuit for current measurement and the platform for resistance measurement, we developed a current measurement platform that can form DUTs for each unit cell by forming dielectric films on the platform by an additional process with simple steps and measure leakage current of a large number of samples. Discharge current transient spectroscopy (DCTS) [32][33][34][35][36][37][38][39] has been proposed as one of the electrical evaluation methods for the trap property.…”

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

“…In order to overcome these challenges, we have previously developed a resistance measurement platform 43) that measures 500 000 devices-under-test (DUTs) of various memory materials within 0.5 s with simple process steps. The platform contributes to shortening turnaround time from the fabrication to the evaluation of new memory materials and providing opportunities for R&D of emerging memory materials.…”

“…The unit cell of the previous platform consists of one selector transistor and one DUT (1T1R cell). 43) On the 1T1R cell, the measured resistance includes on-resistance of the selector (R ON ) in addition to the resistance of DUT (R DUT ), and the R ON varies from cell to cell. Therefore, the R ON determines the lower limit of the measurement range and accuracy.…”