Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Kim, Sang-Bum; Lee, Byoungil; Asheghi, Mehdi; Hurkx, Fred; Reifenberg, John P.; Goodson, Kenneth E.; Wong, H.-S. Philip

doi:10.1109/ted.2010.2095502

Cited by 63 publications

(64 citation statements)

References 22 publications

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“…In contrast to many other works [16,25,28,39,40], the resistance is measured directly during annealing in all the experiments performed within this work.…”

Section: Resistance Drift In Amorphous As-deposited Phase Change Filmsmentioning

confidence: 99%

Role of activation energy in resistance drift of amorphous phase change materials

et al. 2014

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The time evolution of the resistance of amorphous thin films of the phase change materials Ge 2 Sb 2 Te 5 , GeTe and AgIn-Sb 2 Te is measured during annealing at T = 80 • C. The annealing process is interrupted by several fast temperature dips to determine the changing temperature dependence of the resistance. This procedure enables us to identify to what extent the resistance increase over time can be traced back to an increase in activation energy E A or to a rise of the prefactor R * . We observe that, depending on the material, the dominating contribution to the increase in resistance during annealing can be either a change in activation energy (Ge 2 Sb 2 Te 5 ) or a change in prefactor (AgIn-Sb 2 Te). In the case of GeTe, both contribute about equally. We conclude that any phenomenological model for the resistance drift in amorphous phase change materials that is based on the increase of one parameter alone (e.g., the activation energy) cannot claim general validity.

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“…In contrast to many other works [16,25,28,39,40], the resistance is measured directly during annealing in all the experiments performed within this work.…”

Section: Resistance Drift In Amorphous As-deposited Phase Change Filmsmentioning

confidence: 99%

Role of activation energy in resistance drift of amorphous phase change materials

et al. 2014

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“…The inset 3D figure shows the MTS heater overlapped region over narrow phase change material programming region. After [12].…”

Section: Phase Change Memorymentioning

confidence: 99%

“…Fig. 1 shows the lateral PCM cell int platinum micro-thermal stage [11] [12]. By generating Joule heat in the Pt heater, th the programming region of the PCM cell is c the heater is located only a 1μm away from region and also due to its smaller dimensions, constant of this structure is ~1μs extending t capability by up to 6 orders of magnitude conventional thermal stages.…”

Section: A Understanding Resistance Drift and Thermal Disturbancementioning

confidence: 99%

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Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)

Wong

Kim

Lee

et al. 2011

2011 3rd IEEE International Memory Workshop (IMW)

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Abstract-The increasing demand for high-capacity nonvolatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.

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“…18 However, according to other studies, 10,15 the resistance drift is related to the stress relaxation, leaving this as an unresolved issue. As the PCM dimension becomes smaller (such as 20∼40 nm thin film, 16,19,20 ∼40 nm NW formation 9,15,21,22 or even under 10 nm size 23 ), the PCM region would be sufficiently small enough to undergo complete phase transition, and thus the external effect from ELM is more critical than in the case of conventional large dimension PCRAM devices reported to date. Therefore, studies on stress relaxation correlated to ELM are needed.…”

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confidence: 99%

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

Jin

Kim

et al. 2014

AIP Advances

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Phase change random access memory (PCRAM) devices exhibit a steady increase in resistance in the amorphous phase upon aging and this resistance drift phenomenon directly affects the device reliability. A stress relaxation model is used here to study the effect of a device encapsulating layer material in addressing the resistance drift phenomenon in PCRAM. The resistance drift can be increased or decreased depending on the biaxial moduli of the phase change material (YPCM) and the encapsulating layer material (YELM) according to the stress relationship between them in the drift regime. The proposed model suggests that the resistance drift can be effectively reduced by selecting a proper material as an encapsulating layer. Moreover, our model explains that reducing the size of the phase change material (PCM) while fully reset and reducing the amorphous/crystalline ratio in PCM help to improve the resistance drift, and thus opens an avenue for highly reliable multilevel PCRAM applications.

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Resistance and Threshold Switching Voltage Drift Behavior in Phase-Change Memory and Their Temperature Dependence at Microsecond Time Scales Studied Using a Micro-Thermal Stage

Cited by 63 publications

References 22 publications

Role of activation energy in resistance drift of amorphous phase change materials

Role of activation energy in resistance drift of amorphous phase change materials

Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)

Role of an encapsulating layer for reducing resistance drift in phase change random access memory

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