Research progress in the postprocessing and application of GaN crystal

Li, Qiubo; Yu, Jiaoxian; Wang, Shouzhi; Wang, Guodong; Liu, Guangxia; Liu, Lei; Zhang, Shiying; Xu, Xiangang; Zhang, Lei

doi:10.1039/d2ce01539k

Cited by 4 publications

(1 citation statement)

References 60 publications

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“…In recent years, with the breakthrough of GaN material growth technology, 4 inch and even 6 inch GaN wafers have started to enter the commercialization stage. In this context, the optimization of vertical GaN-based SBD mainly lies in three parts: substrate quality, termination structure and drift layer, and due to the limitation of material growth level, the dislocation density of GaN substrate is generally 10 4 -10 6 cm −2 at present, which is much larger than that of Si and SiC [14,67]. In 2019, Gu et al [68] tried to take advantage of the feature that Ge has a smaller atomic radius than Si and used Ge instead of Si as the doping element of N + -GaN substrate to fabricate a vertical GaN-based SBD.…”

Section: Vertical Structure Gan-based Sbdmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate. The advantages and disadvantages of GaN-based SBD of different structures and the problems in the research process are summarized, and the future application fields of GaN-based SBD devices are prospected.

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Section: Vertical Structure Gan-based Sbdmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Zhao,

Wang,

Liu

et al. 2024

Adv Materials Inter

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As the representative of substrate material, gallium nitride (GaN) has excellent mechanical properties and high thermal stability. Achieving high surface flatness is critical for subsequent epitaxial growth and device fabrication processes. Chemical mechanical polishing (CMP) technique of GaN is commonly one of the most effective ways to achieve atomically smooth surfaces. However, the current process is difficult to meet the needs of industrial development due to the characteristics of low material removal rate. Assisted enhanced CMP technique is deemed to possess significant potential due to its improved processing efficiency and surface topography quality. Herein, a variety of auxiliary enhanced CMP systems are designed and studied. In this review, recent advances both in conventional and assisted enhanced CMP of GaN are comprehensive presented, with a focus on their potential applications in various fields. The mechanism and design strategy of the process are discussed and summarized. The key issues in machining atomically flattened surface are outlined, and future strategies for sustainable development are also proposed. This review provides a novel perspective on GaN processing and offers more inspiration for future research to realize its development and commercial application.

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Amorphous GaN: Polyamorphism and crystallization at high pressure

Durandurdu

2024

Computational Materials Science

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Research progress in the postprocessing and application of GaN crystal

Abstract: This manuscript systematically reviews the importance of wet etching and thermal annealing in GaN crystal applications for the first time.

Cited by 4 publications

References 60 publications

Research progress and prospect of GaN Schottky diodes

Research progress and prospect of GaN Schottky diodes

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate

Amorphous GaN: Polyamorphism and crystallization at high pressure

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