Research progress and prospect of GaN Schottky diodes
Yu Shao,
Fang Zhang,
Yunlong He
et al.
Abstract:GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure… Show more
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