Research on single event transient pulse quenching effect in 90 nm CMOS technology

Abstract

Since single event transient pulse quenching can reduce the SET (single event transient) pulsewidths effectively, the charge collected by passive device should be maximized in order to minimize the propagated SET. From the perspective of the layout and circuit design, the SET pulsewidths can be greatly inhibited by minimizing the layout spacing and signal propagation delay, which sheds new light on the radiation-hardened ICs (integrated circuits) design. Studies show that the SET pulsewidths of propagation are not in direct proportion to the LET (linear energy transfer) of incident particles, thus the defining of the LET threshold should be noted when SET/SEU (single event upset) occurs for the radiation-hardened design. The capability of anti-radiation meets the demand when LET is high but some soft errors may occur when LET is low. Therefore, radiation experiments should be focused on evaluating the LET that demonstrates the worst response to the circuit. SET propagation, radiation hardening by design, charge collection, charge share, quenching Citation: Qin J R, Chen S M, Liu B W, et al. Research on single event transient pulse quenching effect in 90 nm CMOS technology.

Experimental Investigation of the Joint Influence of Reduced Supply Voltage and Charge Sharing on Single-Event Transient Waveforms in 65-nm Triple-Well CMOS

“…Our measurement setup enables us to simultaneously capture the response of multiple nodes for every ion hit, as well as to track the ion-hit location. This allows us to replicate a scenario similar to that used in previously reported 3-D simulations [7], [11], [12], [16], where both responses of a node that is hit (active node) and the subsequent node in the inverter chain (passive node) are being observed. We will refer to SETs from these nodes as "direct-hit" and "indirect" SETs, respectively.…”

“…This enabled us to investigate influences of supply voltage and charge sharing on SET pulse widths and cross section, distinguishing between SET generation mechanisms and effects of their propagation through the circuit. To the best of our knowledge, until now such investigations were performed only by simulations [6], [11], [12], [16], [17]. A simple method was introduced for estimating the range of SET pulses at reduced VDDs, and it matches well with measurement results.…”

“…However, the investigation of SETs directly at the origin of the pulse, as well as the details of analog SET shapes, is important for distinguishing different underlying collection and propagation phenomena. In this paper, such investigations have been predominantly carried out using simulations [6], [7], [10]- [12], [16], [17].…”

Synergistic Effect of BTI and Process Variations on the Soft Error Rate Estimation in Digital Circuits

“…FIT is the number of circuits or systems that fail within 1 billion hours [24]; from the description, we can obtain (1). For calculation convenience, Equation (1) is transformed to (2), where the average number of failures per cycle is expressed as the probability of an error in each cycle. The failure per cycle is based on the calculation of which particle can cause circuit error and knowing the probability of node fault generated by particle striking.…”

“…In the space radiation environment, charges generated on particle tracks are collected by sensitive nodes, resulting in instantaneous changes in voltage and current, called single event transients (SETs) [1], [2]. SETs can cause abnormal operation of phase-locked loops, operational amplifiers and IO analog linear circuits.…”