Experimental Investigation of the Joint Influence of Reduced Supply Voltage and Charge Sharing on Single-Event Transient Waveforms in 65-nm Triple-Well CMOS

Abstract

Full waveforms of single-event transients (SETs) in inverter chains were measured under focused heavy-ion microbeam irradiation. Inverter chains of varying spacings were irradiated with 48 Ca and 197 Au ions. The influence of changing the supply voltage from subthreshold to nominal level on SET forming and propagation was investigated, and the role of charge sharing is discussed. Key factors that influence SET widths and cross sections are identified across the applied range of supply voltages. A simple method is presented for estimating average SET widths at decreased supply voltages, and is based on the SET width measurements at nominal supply voltage, transistorlevel simulations, and extracted circuit parameters. The proposed method matches well with the measured data.

Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs

“…Especially, 28-nm FDSOI devices can work at ultra-low supply voltage of 0.4 V to achieve ultra-low power consumption [12]. However, it is well known that the drop in the supply voltage brings great challenges to the performance of the circuit, and increases the sensitivity of the single-event effect significantly [13,14]. Therefore, the ultra-low supply voltage dependence of SET in 28-nm FDSOI technology needs to be studied.…”