Requirements of power supply parameters for high-power pulsed magnetron sputtering

Metal plasmas for the fabrication of nanostructures

“…Mid-frequency 'pulseddc magnetron sputtering' or short 'pulse sputtering' is used when peak power densities on the target surface are moderate (∼10 W cm −2 ) and repetition frequencies are relatively high (typically up to 350 kHz). In the recent literature, the term 'high power pulsed magnetron sputtering' (HPPMS) is used with two different meanings, namely, (i), for mid-frequency, pulsed-dc magnetron sputtering applied to large target areas, leading to many 10 kW of total (average) power [19] yet moderate peak power densities of several 10 W cm −2 , and (ii), to pulsed sputtering with relatively low pulse repetition rates (1 kHz or less) with extremely high peak power, typically hundreds of kW or even MW, corresponding to peak power densities of typically 1 kW cm −2 , or even greater [20,21]. To distinguish between these forms of pulsed sputtering, the term HIPIMS was introduced, referring to the process of using very high peak power at relatively low repetition rates [22,23].…”

“…Once arcing has started, highly ionized metal plasma is produced including undesirable macroparticles: after all, the process is now a cathodic arc, as discussed below. Conditions for arcing and arc suppression have been described in the literature [19,24,25]. Modern power supplies are equipped with sophisticated and fast (∼1 µs) arc detection and termination circuits that enable application of HIPIMS even to the very important and challenging reactive material systems like zirconium oxide and tantalum oxide [26], and aluminium oxide [27].…”

Atomic Layer Deposition of Epitaxial and Polycrystalline SnO2 Films from the SnI4/O2 Precursor Combination

“…Thin films of the material are usually grown by radiofrequency magnetron sputtering, [2,13] although some other techniques, each having its own strong points, have also come into use. These techniques include mid-frequency dual magnetron sputtering, [11] bipolar pulsed magnetron sputtering, [14] direct current magnetron sputtering, [15] dual ion beam sputtering, [16] electron beam evaporation, [10] dual ion beam-assisted electron beam evaporation, [17] pulsed laser deposition, [18] atmospheric environment laser deposition, [19] rheotaxial growth and thermal oxidation, [20] spray pyrolysis, [6] ultrasonic spray pyrolysis, [5] sol-gel dip coating, [21] deposition from aqueous solutions, [22] and a variety of versions of CVD, viz., its atmospheric-pressure, [23] low-pressure, [24] ion beam-induced, [25] plasma-enhanced, [26] laser-induced, [27] photo-induced, [28] and atomic layer-controlled [29] variants. Recently, there has been considerable interest in epitaxial SnO 2 thin films.…”

Study on High Quality Polycrystalline Silicon p/n Films Fabrication through Recrystallization by RTP

“…The aluminum film, the cell's electrode, both may serve as the battery's back reflection field but also reduce the back surface current carrier recombination; therefore it is an important working procedure of solar cell manufacture. In the former experience, when the agglutination is heated up to above 577 o C, aluminum silicon may be obtained [5][6], when the temperature reduces, silicon in the liquid phase is coagulated, forming aluminum recrystallization layer, this in fact a doping process [7]. Therefore, under the condition of enough aluminum content and the alloy temperature, the aluminum back electric field can be formed.…”