Study on High Quality Polycrystalline Silicon p/n Films Fabrication through Recrystallization by RTP

Abstract

Aluminum films were evaporated on quartz substrates, and then an npp+ structure was formed by a p/n junction deposited on the aluminum film. The Raman, XRD and SEM were used to analyze the crystallization and components of the samples before and after annealed. The results showed that they were compact and almost 100% in crystallization after annealing and carrier motility also increase. The mechanism of the rapid thermal process is also proposed, its superior effect mainly contributes to the photoelectron induced diffusion process, in which the short wavelength of the tungsten plays an important role.