Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Jung, Tae Soo; Kim, Si Joon; Kim, Chul Ho; Jung, Joohye; Na, Jaewon; Sabri, Mardhiah Muhamad; Kim, Hyun Jae

doi:10.1109/ted.2015.2455558

Cited by 5 publications

(3 citation statements)

References 26 publications

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“…This peak indicates that organic materials start to decompose at this temperature. In our results, a remarkably low-temperature exothermic peak appeared compared with many DCS graphs of IZO solutions from previous studies. − Thus, we concluded that the low-temperature solution process was feasible.…”

Section: Results and Discussionsupporting

confidence: 75%

Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction

Kang

Park

et al. 2018

ACS Appl. Mater. Interfaces

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Eco-friendly solution-processed oxide thin-film transistors (TFTs) were fabricated through photocatalytic reaction of titanium dioxide (PRT). The titanium dioxide (TiO) surface reacts with HO under ultraviolet (UV) light irradiation and generates hydroxyl radicals (OH•). These hydroxyl radicals accelerate the decomposition of large organic compounds such as 2-methoxyethanol (2ME; one of the representative solvents for solution-processed metal oxides), creating smaller organic molecular structures compared with 2ME. The decomposed small organic materials have low molar masses and low boiling points, which help improving electrical properties via diminishing defect sites in oxide channel layers and fabricating low-temperature solution-processed oxide TFTs. As a result, the field-effect mobility improved from 4.29 to 10.24 cm/V·s for IGZO TFTs and from 2.78 to 7.82 cm/V·s for IZO TFTs, and the V shift caused by positive bias stress and negative bias illumination stress over 1000 s under 5700 lux decreased from 6.2 to 2.9 V and from 15.3 to 2.8 V, respectively. In theory, TiO has a permanent photocatalytic reaction; as such, hydroxyl radicals are generated continuously under UV irradiation, improving the electrical characteristics of solution-processed IZO TFTs even after four iterations of TiO recycling in this study. Thus, the PRT method provides an eco-friendly approach for high-performance solution-processed oxide TFTs.

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Section: Results and Discussionsupporting

confidence: 75%

Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction

Kang

Park

et al. 2018

ACS Appl. Mater. Interfaces

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“…Many researches have been proposed to improve these inferior characteristics of the solution-processed AOS TFTs, such as those on composition modification, dopant addition, additive addition, plasma treatment, and UV irradiation [6][7][8][9][10]. These methods, however, could not address one inherent limitation of the solution-processed AOS films: their low film density.…”

Section: Introductionmentioning

confidence: 99%

A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

Hong

Park

Kim

et al. 2016

Journal of Information Display

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In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve their electrical characteristics and stabilities based on the authors' previous researches. The MSAL structures can overcome an inherent weakness of the solution-processed AOS TFTs, which is the creation of porosities from solvent volatilization. Furthermore, by modifying each layer, the performance and reliability of the solution-processed AOS TFTs could be improved more. Here, the fundamental studies of MSAL structures with homo-stacked active-layer TFTs are presented, and the various modulations of active layers in hetero-stacked active-layer TFTs are covered. In addition, the effect of the interface between the stacked layers is also discussed.

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“…To overcome these issues, many researchers have investigated with various methods to realize high performance and stable TFTs. In order to improve the μ FET , methods such as material doping, plasma treatment, and use of high-k gate insulator have been conducted [4][5][6]. For the high stability, methods such as oxidant treatment and use of multi-stacked structure have been conducted [7,8].…”

Section: Introductionmentioning

confidence: 99%

P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide

Jung¹,

Lee²,

Kim³

et al. 2019

Symp Digest of Tech Papers

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We have studied how to improve the mobility and stability of solution processed zinc‐tin oxide thin‐film transistors (ZTO TFTs) simultaneously using multifunctional potassium superoxide precursor. Potassium cations in the potassium superoxide precursor acts as a shallow donor in the ZTO thin film to improve the carrier concentration (electron), which allows the potassium‐doped ZTO TFT to exhibit high mobility. Then, the anion of the precursor exists as a superoxide radical, and it showed the effect of reducing the oxygen vacancy in the process of forming the oxide thin film Consequently, potassium‐doped ZTO TFT using potassium superoxide precursor exhibited improved mobility and stability, showing an increase in the mobility from 5.11 to 8.36 cm2/Vs and a decrease in the threshold voltage shift from 4.65 to 3.36 V under a negative bias temperature illumination stress test conducted over 5,000 sec..

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Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Cited by 5 publications

References 26 publications

Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction

Improvement in Electrical Characteristics of Eco-friendly Indium Zinc Oxide Thin-Film Transistors by Photocatalytic Reaction

A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

P‐23: Enhancement in the Mobility and the Stability of Solution‐Processed Zinc‐Tin Oxide Thin‐Film Transistors Using Alkali Metal Superoxide

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