A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

Abstract

In this review, the multi-stacked active-layer (MSAL) structures for the solution-processed amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) are summarized to improve their electrical characteristics and stabilities based on the authors' previous researches. The MSAL structures can overcome an inherent weakness of the solution-processed AOS TFTs, which is the creation of porosities from solvent volatilization. Furthermore, by modifying each layer, the performance and reliability of the solution-processed AOS TFTs could be improved more. Here, the fundamental studies of MSAL structures with homo-stacked active-layer TFTs are presented, and the various modulations of active layers in hetero-stacked active-layer TFTs are covered. In addition, the effect of the interface between the stacked layers is also discussed.

P‐211: Late‐News Poster: A 5.5‐inch FHD IGZO in Cell Touch LCD with High SNR

“…Amorphous oxide semiconductors (AOSs), especially a-IGZO (Indium Gallium Zinc Oxygen), TFTs are considered prime candidates for next generation displays due to the high mobility [5]. They are used as the backplane in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays, for mobility>10 cm 2 /V•sec, good uniformity over large glass substrate size, and low temperature process [6] [7]. Table 1 shows the technology summary table of the 5.5 inch IGZO in cell touch displays.…”

15.4: Fabrication of 5.5‐inch AMOLED Panel using IGZO TFTs

“…In recent years, amorphous oxide semiconductors (AOSs), especially a-IGZO (Indium Gallium Zinc Oxygen), TFTs are considered prime candidates for next generation displays due to the high mobility [1] [2]. They are used as the backplane in liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays [3], for mobility > 10 cm 2 /V•sec, good uniformity over large glass substrate size, and low temperature process [4] [5].…”

P‐7: Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process.

“…On the other hand, amorphous metal oxide semiconductors (AOSs) have attained great attention as backplane electronics for high-end display application for their reasonable low off-current, good uniformity and cost-effective fabrication process. [2][3][4] Conventionally, these metal oxide semiconductors, for example indium gallium zinc oxide (IGZO), indium zinc oxide (IZO) and zinc oxide (ZnO), are usually deposited using sputter system which is based on physical ion bombardment mechanism.…”