Repetitive surge current test of SiC MPS diode with load in bipolar regime

Palanisamy, Shanmuganathan; Kowalsky, Jens; Lutz, Josef; Basler, Thomas; Rupp, Roland; Moazzami-Fallah, Jasmin

doi:10.1109/ispsd.2018.8393679

Cited by 21 publications

(12 citation statements)

References 6 publications

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“…19) The diode must withstand the excess current over its rating over a short period of time and consequently, it is regarded as a reliability factor. 20,21) Therefore, it is necessary to understand their behaviour when subjected to high current stress. Many studies were done to address the surge capability of power diodes in the past decades focusing on silicon and silicon carbide (SiC) devices.…”

Section: Introductionmentioning

confidence: 99%

Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability

Sheikhan

Narayanankutty

Madathil

et al. 2023

Jpn. J. Appl. Phys.

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Surge current capability of power diodes is one of the essential parameters that needs to be considered for high power density operations in power electronic applications. Gallium Nitride (GaN) is emerging as the next generation of power semiconductor devices due to its superior material characteristics. This work presents the device working principle, characteristics, and the surge capability of 1200V GaN polarisation superjunction (PSJ) hybrid diodes. The experimental results show that the GaN PSJ diode can withstand a surge current of 60A which is around 8 times its rated current and a surge energy of 5.4J. Additionally, despite having a merged PiN and Schottky structure, no bipolar current flow due to the activation of p-doped GaN can be observed until breakdown. This can also be confirmed through the device forward characteristic which shows a unique saturation behaviour at about 76A without any bipolar region.

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Section: Introductionmentioning

confidence: 99%

Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability

Sheikhan

Narayanankutty

Madathil

et al. 2023

Jpn. J. Appl. Phys.

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“…This can be explained by the fact that there is less headroom to dissipate power during the recovery process when the temperature is increased. Since the degradation or destruction of devices under the surge testing can be linked to high dissipated energy leading to molten metallization [7], [28], the dissipated surge energy is also calculated akin to that in UIS measurements. The critical surge energy is determined as the maximum value before failure of the device during the progressive surge tests as highlighted in Fig.…”

Section: B Results Analysismentioning

confidence: 99%

Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Shen

Jahdi

Yang

et al. 2022

2022 IEEE Energy Conversion Congress and Exposition (ECCE)

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A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes and SiC MPS diodes with temperatures ranging to up to 175°C. The results show that the SiC devices outperform the Silicon devices in terms of the avalanche ruggedness, while the SiC MPS diode can compete with the Silicon PiN diode in terms of the surge current performance. These results are validated by the experimental measurements and their subsequent calculated avalanche energy.

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“…It usually occurs at local areas with a lowered resistance or a high concentrated electric field strength, compromising the device performance, reliability and ruggedness [1]- [3]. This effect is studied and partially avoided by design using physics-based simulations [4], [5]. This entails limitations to quantitatively predict such an effect for wide bandgap (WBG) power devices and/or its geometrical study (3D effects), as some of these parameters or models have not been properly assessed [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

Bonet

Aviñó-Salvadó

Vellvehı́

et al. 2022

IEEE Electron Device Lett.

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Die-level current crowding phenomena are analyzed at the microsecond timescale with an internal IR-Laser Deflection set-up. To this end, the 4H-SiC plasmaoptical coefficient for the refractive index is reported for the first time. A SiC Schottky diode with an edge termination based on a junction termination extension is used as a test vehicle. Under biasing conditions, the edge termination starts a local bipolar conduction along the device active area perimeter, leading to current crowding effects. Using refractive index measurements, a depth-resolved carrier profile is extracted and assessed using both, simulation and Free Carrier Absorption measurements.

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Repetitive surge current test of SiC MPS diode with load in bipolar regime

Cited by 21 publications

References 6 publications

Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability

Analysis of 1.2 kV GaN polarisation superjunction diode surge current capability

Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

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