Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

Bonet, F.; Aviñó-Salvadó, Oriol; Vellvehı́, M.; Jordà, X.; Godignon, P.; Perpiñà, X.

doi:10.1109/led.2022.3171112

Cited by 4 publications

(2 citation statements)

References 21 publications

(24 reference statements)

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“…Consequently, there is a need for techniques that can provide both time and spatial resolution to detect and monitor the emergence of localized hotspots. These hot spots can result from phenomena like current crowding effects [7]- [11] . In this scenario, surface hot spots typically indicate the location of weak spots projected onto the top metallization of the device.…”

Section: Introductionmentioning

confidence: 99%

“…In this scenario, surface hot spots typically indicate the location of weak spots projected onto the top metallization of the device. These weak spots can be attributed to factors such as the device's layout, the packaging technology used to define the device top contacts, or a combination of both [7]- [11]. Detecting hot spots holds a significant potential for studying current crowding, specifically at the top metallization layer.…”

Section: Introductionmentioning

confidence: 99%

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Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

Ferrer,

Aviñó,

Vellvehi

et al. 2023

IEEE Trans. Instrum. Meas.

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A novel solution for off-chip electrothermal studies in power devices at die-level and short timescales is reported. The proposed method involves acquiring a sequence of thermal images on top of the die with an IR camera, while the device is biased under a periodic non-harmonic modulated current. Fourier coefficients are then extracted using lock-in strategies and the time evolution of the device thermal map is reconstructed using Fourier series. To evaluate and showcase its potential, the conventional approach of boxcar averaging is implemented and used as a reference. As a case study, a reverse conducting-IGBT (RC-IGBT) is thermally measured under both forward and reverse modes. The proposed strategy significantly improves the thermal and time resolution, overcoming the limitations of the camera's frame rate and noise resolution. Moreover, the impact of current crowding on the power device is studied at the millisecond time scale, considering both biasing modes.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

Ferrer,

Aviñó,

Vellvehi

et al. 2023

IEEE Trans. Instrum. Meas.

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Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation

2022

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Junction barrier Schottky (JBS) structures are extensively used in silicon carbide devices; however, the complex surface composition makes the direct barrier evaluation difficult. To exclude the field-dependent distortion on a barrier for a direct unbiased evaluation in JBS structures, this work proposes a new evaluation method with a physics-based derivation and experimental demonstration, where a batch of JBS diodes are fabricated with a quasi-continuous spacing variation distribution achieved by the spreading etching technique. In addition, a detailed analysis based on the field-dependent barrier is provided. The result illustrates the chain-like activation and its saturation limit with a quantitative estimate in the straggle region. With the capability of the high linearity to exploit the statistical information for analysis stability, the proposed indicator could be a quantitative and versatile reference for designers dealing with nonideal surfaces.

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Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

Hong

Zheng

et al. 2022

Applied Physics Letters

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A β-Ga2O3 Schottky barrier diode (SBD) with a p-type NiOx guard ring was fabricated, and the reverse leakage and subthreshold leakage current reduction was found at high temperatures from temperature-dependent I–V characteristics. The functional mechanisms of NiOx as edge termination on leakage reduction were studied. NiOx can increase the barrier height and passivate the defects at the interface, resulting in the suppression of subthreshold leakage and elimination of current crowding effect confirmed by a thermal emission microscope. From the temperature-dependent x-ray photoelectron spectroscopy characteristics, more holes generated to deplete Ga2O3 at higher temperatures were found. It leads to reduce the reverse leakage current. The small-polaron transportation in NiOx is proposed to argue the implausibility of the leakage conduction in NiOx. This work will offer critical physical insight and a valuable route for developing low-leakage Ga2O3 SBDs.

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Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding

Cited by 4 publications

References 21 publications

Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics

Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation

Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

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