Removal of thick (&amp;gt;100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching

Haberer, Elaine D.; Sharma, Rajat; Stonas, A. R.; Nakamura, Shuji; DenBaars, Steven P.; Hu, Evelyn L.

doi:10.1063/1.1776615

Cited by 53 publications

(48 citation statements)

References 14 publications

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“…This is a process in which photogenerated holes enhance the oxidation of the GaN, with the oxide subsequently dissolved in the electrolyte (water), leading to a slight etching of the material 21 . In this work, we carried out an experiment to directly validate this model, by masking a portion of the microdisk to mark changes in its geometry during the water-based tuning process.…”

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confidence: 99%

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

Niu

Liu

Aharonovich

et al. 2012

Applied Physics Letters

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Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.In recent years, there has been tremendous progress in the understanding of lightmatter interactions (cavity quantum electrodynamics, or cQED) in semiconductor systems [1][2][3][4][5][6][7][8] . Strong coupling has been observed for GaAs-based cavities coupled to embedded InGaAs quantum dots 2, 3, 4 , and studies have also extended to other semiconductor materials 5 . Such studies provide a promising route to the realization of quantum information technology 6-9 and ultra-efficient light emitting devices 10, 11 . In particular, InGaN quantum dots (QDs), well coupled to GaN-based optical cavities offer the potential of highly efficient devices operating at room temperature in the

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confidence: 99%

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

Niu

Liu

Aharonovich

et al. 2012

Applied Physics Letters

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“…An airgap of the order of 1 µm was achieved with this technology, which is large enough to minimize interactions with the substrate and related light losses. The possibility of producing large airgaps is an advantage of dry RIE as compared to doping-selective and bandgapselective PEC etching and with different III-nitride sacrificial layers ensuring a limited airgap thickness of only a few hundreds of nanometers [55][56][57]. This issue is particularly critical for structures operating in the near infrared.…”

Section: Technologies For the Fabrication Of Pc Structures (A Comparimentioning

confidence: 99%

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Tiginyanu¹,

Ursaki²

2014

Turk J Phys

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Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

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“…Some developper (AZ400 in which the active component is KOH) employed in lithography are also known to etch the wurtzite layers 9 . Another solution is to developp a band-gap selective photoelectrochemical etching 10 . It is a potential way to stop etching at a level optimized for collection of carriers.…”

Section: Etching Of Basal Algan Layermentioning

confidence: 99%

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

Reverchon

Gourdel

Robo³

et al. 2017

International Conference on Space Optics — ICSO 2008

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Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching

Abstract: Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

Cited by 53 publications

References 14 publications

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

GaN nanostructuring for the fabrication of thin membranes and emerging applications

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

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