GaN nanostructuring for the fabrication of thin membranes and emerging applications

Abstract

Abstract:We present a review of technological methods developed in recent years for the purpose of gallium nitride nanostructuring, with the main focus on fabrication of thin GaN membranes. In particular, we report on traditional methods of wet etching undercutting for membrane manufacturing, technologies applied for the fabrication of photonic crystal structures based on GaN nanomembranes, double side processing, and surface charge lithography. Prospects of membrane applications in photonic devices, sensors, and microoptoelectromechanical and nanoelectromechanical systems are discussed, taking into account the advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials.

Porous semiconductor compounds

“…The occurrence of two types of modes (surface and bulk modes) was found in such membranes and the prospects of their incorporation in photonic and optoelectronic integrated circuits were discussed. The technologies applied for the fabrication of photonic crystal structures based on GaN nanomemranes and their prospects for applications in photonic devices, sensors, microoptoelectromechanical and nanoelectromechanical systems, taking into account advantageous piezoelectric, optical, and mechanical properties of GaN and related III-V nitride materials, have been highlighted in a separate review [296].…”

Atomically thin semiconducting layers and nanomembranes: a review

“…In particular, an important field of research is the development of self-propelled micro-jets by rolling up nanomembranes [73,74], while ultrathin membranes from piezoelectric semiconductor materials are of paramount importance for application in NEMS, e.g. in sensors based on surface acoustic waves where the resonant frequency increases with decreasing membrane thickness [76].…”