Removal of ion-implanted photoresists on GaAs using two organic solvents in sequence

Oh, Eunseok; Na, Jihoon; Lee, Seunghyo; Lim, Sangwoo

doi:10.1016/j.apsusc.2016.03.100

Cited by 8 publications

(3 citation statements)

References 35 publications

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“…Figure 2 shows the optical microscope images of implanted photoresist on the blanket GaAs wafers after photoresist removal processes in the DMSO, AcN and DMSO+AcN solution. When DMSO or AcN was used to remove ion implanted photoresist on GaAs, photoresist layer was not completely removed because of a low penetration effect of DMSO into the implanted photoresist and a quite different polarity of AcN with photoresist structure [4]. However, most of the ion implanted KrF photoresist on GaAs could be removed in the mixture of 6:4 DMSO+AcN solution.…”

Section: Resultsmentioning

confidence: 99%

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent

Lim²

2018

SSP

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Removal of highly ion-implanted photoresist on the trench-structured GaAs was conducted by mixtures of organic solvents with additives. The ion implanted KrF photoresist on trench-structured GaAs was completely removed at 30 °C when an additive was added to the DMSO+ acetonitrile (AcN) solution. In addition, the removal rate of the implanted photoresist could be increased in DMSO+AcN+additive solution. It was also observed that the DMSO+AcN+additive solution did not cause significant material loss on the GaAs surface during the photoresist removal process.

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Section: Resultsmentioning

confidence: 99%

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent

Lim²

2018

SSP

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“…wet treatment for crust removal is relatively cumbersome [2]. Oxygen plasma ashing requires substantially higher temperatures for a faster PR removal rate.…”

Section: Introductionmentioning

confidence: 99%

Effects of RF bias frequency and power on the plasma parameters and ash rate in a remote plasma source

Zhang

Lee

et al. 2021

Plasma Sources Sci. Technol.

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The effects of the RF bias frequency (2–27.12 MHz) and power (0–50 W) on plasma parameters, i.e., effective electron temperatures, electron densities, and electron energy probability functions (EEPFs), were investigated in a remote plasma source. A small cylindrical Langmuir probe based on the Druyvesteyn method was used for the measurements. When the bias power was changed from 0 W to 10 W for each bias frequency, the electron density decreased and the effective electron temperature increased at a given antenna power. As the 2 MHz bias power increased to 50 W, the electron density increased remarkably, whereas the effective electron temperature decreased. Simultaneously, the EEPF evolved from a Druyvesteyn-like distribution to a nearly Maxwellian distribution. In contrast to 2 MHz, when increasing the bias power of 12.5 MHz or 27.12 MHz, there was no distinct change in the effective electron temperature by the bias power and the electron density increased slightly or barely changed. Moreover, the EEPFs retained a Druyvesteyn-like distribution during the bias power increase. These results reveal that the plasma parameters are more controllable at lower bias frequencies, and the analysis is presented in relation to the electron heating mechanism. Therewithal, the ash rate for a 2 MHz bias power was observed to be the highest among the three frequencies when the discharge was operated with pure oxygen.

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“…Generally, wet chemical stripping has two general types [20]. (i) Organic solvent dissolution approach [21][22][23]. Positive photoresist, which is soluble in a large number of organic solvent, was stripped in either acetone [20], isopropyl alcoholor methyl ethyl ketone, but that solvent is hard to remove negative photoresist.…”

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confidence: 99%

Double‐layer resist method to improve descum result when removing negative photoresist

Yang

Wang

et al. 2019

Micro & Nano Letters

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A novel double-layer resist method was presented in this work to decrease the negative photoresist scum. Positive photoresist was chosen as the bottom layer resist and negative photoresist as the top layer resist. This work studied the effect of viscosity and thickness of bottom layer resist on the mean number of scum. The experiment shows that the low viscosity positive photoresist AZ703, with the spin speed of 3000 r/min and the thickness of 1.10 um, had prominent effect on the removal of photoresist. To minimise the area of the top layer contact with substrate and further reduce the scum, 8 µm was selected as the optimal retracting distance d of the bottom layer resist.

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Removal of ion-implanted photoresists on GaAs using two organic solvents in sequence

Cited by 8 publications

References 35 publications

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent

Effects of RF bias frequency and power on the plasma parameters and ash rate in a remote plasma source

Double‐layer resist method to improve descum result when removing negative photoresist

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