Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application

Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing

“…89-2482] . In addition, the XRD peaks (311) and (111) at 2θ ∼50.35 and ∼25.45°, respectively, are related to the NiMnIn bottom electrode. ,, The layer structure was confirmed by plotting the Raman spectra of the sputter-deposited V 2 O 5 active switching layer (Figure c). The bonding vibration modes obtained at wave numbers 145, 284, 490, 690, and 994 cm –1 are in good concordance with previously published data.…”

“…The response of the NiMnIn-integrated heterostructure memory device to the temperature and magnetic field was analyzed by plotting the magnetic moment vs temperature ( M – T ) and magnetic moment vs magnetic field ( M – H hysteresis curves), as shown in Figure a,b, respectively. The fabricated V 2 O 5 /NiMnIn heterostructure shows the structural transformation from high-temperature austenite to a low-temperature martensite regime with a transition around ∼280° K (Figure a). ,, The well-saturated M – H curves signify the ferromagnetic behavior of the NiMnIn layer (Figure b). The larger magnetization observed at ∼282 K corresponds to the mixed phase of the FSMA layer.…”

“…This phenomenon is equivalent to the filamentary switching in RRAM devices where the top electrode (TE) and bottom electrode (BE) are joined by conductive filaments (CFs) consisting of defects, vacancies, and ions. , In addition, the charge flow from the top to bottom electrode contributing to the conductivity of the RRAM devices is equivalent to the mass flow in the neurons. The high and low conductivities in switching devices are identical to the LTP and LTD processes in neuromorphic systems, respectively. , In RRAM devices, the transition from a high-resistance state (HRS) to a low-resistance state (LRS) is known as the SET process, and the reverse is known as the RESET process. , The gradual SET and RESET processes are essential for neuromorphic applications. , The gradual switching behavior can be decided by the properties of the active switching material, layer stacking, and the mechanism of filament formation. , …”

“…Moreover, incorporating the functional bottom electrode can improve the applicability of the RRAM devices. In our previous reports, ferromagnetic shape memory alloys (FSMAs, i.e., NiMnIn) have been incorporated as a bottom electrode to alter the switching characteristics. ,,, The effect of the magnetic field and temperature-induced strain in the magnetostrictive FSMA layer have not been explored on the neuromorphic characteristics. The researchers are exploring various flexible substrates for wearable appliances as per the ongoing demand of the modern electronic industries.…”

“…Flexible metal foils are gaining significant attention over polyimides because of high-temperature usage. Stainless steel (SS) has been suggested as a flexible substrate material because of its high Young’s modulus, excellent thermal stability, and good conductivity. ,, …”