Enhanced Synaptic Characteristics under Applied Magnetic Field in V₂O₅/NiMnIn-Based Switching Device for Neuromorphic Computing

Abstract

The present study reports a memory structure Al/ V 2 O 5 /NiMnIn on a flexible stainless steel (SS) substrate for neuromorphic applications. The fabricated device exhibits gradual SET and RESET switching characteristics with an OFF/ON resistance ratio of ∼100, good consistency of 4500, and excellent data retention capability up to 3000 s. The current−voltage (I−V) study supports an Ohmic conduction mechanism in the lowresistance state (LRS). In contrast, the trap-controlled modified space charge conduction mechanism demonstrated the highresistance state (HRS). The resistance vs temperature measurement (R−T) in the LRS and HRS of the device signifies that oxygen vacancies form the conduction filament. We further analyze the synaptic functioning by applying identical consecutive voltage pulses, and the device's conductance change has been observed. These characteristics show a good representation of the biological memory synapse in terms of the artificial memory device. Long-term potentiation (LTP) and long-term depression (LTD) show nonlinear and asymmetry behavior, which is substantial for neuromorphic applications. A considerable shift in LTP and LTD was detected by applying external temperature and magnetic field. This is explained via temperature and magnetic field strain in the functional NiMnIn bottom electrode of the fabricated device. The mechanical flexibility of the memory structure was tested by exploring the switching characteristics with various bending angles and bending cycles. Therefore, the present study offers new avenues for flexible devices with high data storage capability for futuristic neuromorphic applications.

Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device

“…This level of control proves highly beneficial in applications like analog computing, multilevel cell operations, neural networks, and the implementation of synaptic plasticity. − Neurons, the cornerstone of the brain, establish communication through an intricate network of synapses. , These synapses act as junctions between neurons and facilitate the transmission of information by modulating the flow of ionic charges, specifically calcium (Ca 2+ ) and sodium (Na + ) ions or vacancies. This occurrence parallels the filamentary switching observed in the ReRAM device, where conductive filaments contain the flow of charge carriers or ions to connect the top electrode (TE) and bottom electrode (BE). ,, Moreover, ARS offers more straightforward programming and faster switching speeds that find potential applications in digital memory. It is preferred for its effectiveness in scenarios where rapid data access and transfer are crucial. , The choice between ARS and GRS depends on several factors, including the desired functionality, precision requirements, power consumption, and scalability of the specific application. ,, …”

Multilayered Nanometer Thick Films of n-MoS2 QD/n-MoS2/p-CuO as p–n Heterojunctions for Self-Powered Flexible Photodetectors

“…41,55 In this work, MoS 2 and CuO layers have been fabricated using the dc magnetron sputtering approach, enabling better controllability of deposition parameters and its nontoxic and ecofriendly aspects. 56 The MoS 2 QDs have been synthesized in the colloidal form via the solvothermal process and deposited on a heterostructure using the electrophoretic deposition technique. The fabricated flexible hybrid heterostructure shows a broad and rapid photoresponse toward the incidence of UV to NIR wavelengths.…”

“…The current investigations provide evidence for the broad-range photoresponse of n-MoS 2 QDs/n-MoS 2 /p-CuO, a hybrid dimensional heterostructure fabricated on a flexible Ag-coated Kapton substrate. The Kapton substrate belongs to the polyimide-FEP fluoropolymers family with good thermal and chemical stability and superior mechanical flexibility. , In this work, MoS 2 and CuO layers have been fabricated using the dc magnetron sputtering approach, enabling better controllability of deposition parameters and its nontoxic and ecofriendly aspects . The MoS 2 QDs have been synthesized in the colloidal form via the solvothermal process and deposited on a heterostructure using the electrophoretic deposition technique.…”

Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States

“…Using memristors in IMC will enable analogue calculation, which is essential to intelligent and neuromorphic networks, helping us unravel the working mechanism of the human brain. Among all, resistive memristors incorporating transition metal oxides (such as TaO x , , ZnO, , HfO x , − NiO) or 2D materials (such as MoS 2 , , V 2 O 5 ) in metal–insulator–metal (MIM) structures have demonstrated their potential in MS and neuromorphic computing. While conventional electronic devices already enjoy many advantages with charge-current characteristics, spintronic components use the spin flow of electrons which offers multiple benefits, including nonvolatility, faster data processing, and lower power consumption.…”