Remarkably enhanced energy storage properties of lead-free Ba0.53Sr0.47TiO3 thin films capacitors by optimizing bottom electrode thickness

High Energy Performance Ferroelectric (Ba,Sr)(Zr,Ti)O3 Film Capacitors Integrated on Si at 400 °C

“…With the rapid developments in microelectronics and micro-electromechanical systems, there is a great demand for integrated energy devices at a miniaturized scale. Perovskite ferroelectric (FE)-based film capacitors have attracted a great deal of attention due to their high power density (ultrafast charge and discharge speed), superior thermal and mechanical stability, and long work life. , With a large dielectric constant ε r and relatively small remnant polarization P r , BaTiO 3 -based film capacitors have raised a research upsurge internationally in recent years. − Generally speaking, charge–discharge efficiency and energy densities of a FE film capacitor can be calculated from its characteristic P – E curve by the following equations: the efficiency η is defined as , while the recyclable energy density , the charged energy density , and the energy loss density W loss = W c – W rec , where P r is the remnant polarization (polarization at zero electric field), E is the applied electric field, and P max is the electric polarization under the maximum electric field E max .…”

“…Pan et al obtained a large W rec of ∼112 J/cm 3 and η ∼80% in the BiFeO 3 –BaTiO 3 –SrTiO 3 solid-solution films deposited on Nb:SrTiO 3 substrates at 700 °C via a polymorphic nanodomain design. Zhu et al reported W rec ∼51.2 J/cm 3 with efficiency η ∼54.3% in Ba 0.53 Sr 0.47 TiO 3 thin-film capacitors prepared at 700 °C on SrTiO 3 substrates. Through domain engineering, Cheng et al achieved a giant W rec of ∼133 J/cm 3 in thin films and η ∼96% in thick films of epitaxial Ba­(Zr 0.2 Ti 0.8 )­O 3 , which were deposited on SrTiO 3 substrates at 650 °C.…”

Strategies to Improve the Energy Storage Properties of Perovskite Lead-Free Relaxor Ferroelectrics: A Review

“…Here, Ba 0.53 Sr 0.47 TiO 3 (BST) films were deposited on LSMO bottom electrodes of different thicknesses on a (001) SrTiO 3 (STO). The BDS and J r increased from 3075 to 4822 kV/cm and 31 to 51 J/cm 3 , respectively, for an LSMO thickness ranging from 30 to 140 nm [ 169 ]. Increase in LSMO thickness ensured a smooth interface and better stress relaxation that profited the ED properties.…”

Enhanced energy storage properties of epitaxial (Ba0.955Ca0.045)(Zr0.17Ti0.83)O3 ferroelectric thin films

“…High Curie temperature BFO‐, NBT‐, KNN‐, BIT‐based materials with notable electromechanical coupling factor/piezoelectric coefficient values, high polarization etc, can be achieved using suitable site engineering, sintering aids or a new synthesis technique etc 6,7 . These materials are difficult to sinter using ordinary conditions.…”

“…Extensive literature review reveals that the improvement in such properties can be achieved with suitable site engineering. Examples of solid solutions include but not limited to those mentioned here: BST, BCT, BZT, (Ba 1− x Sr x )(Ti 1− y Sn y )O 3 (BSTS), (1 − x )Ba(Ti 0.8 Zr 0.2 )O 3 − x (Ba 0.7 Ca 0.3 )TiO 3 [BZT‐BCT] 4‐8,12‐18 …”