BaTiO3-based ferroelectrics have been extensively studied
due to their large dielectric constants and a high saturated polarization,
which have the potential to store or supply electricity of very high
energy and power densities. In order to further improve the energy
efficiency η and the recyclable energy density W
rec, an A, B-site co-doped (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 ceramic target
was used for sputter deposition of film capacitor structures on Si.
This film composition reduces the remnant polarization P
r, while the choice of a low-temperature, templated sputtering
process facilitates the formation of high-density arrays of columnar
nanograins (average diameter d ∼20 nm) and
grain boundary dead layers. This self-assembled nanostructure further
delays the saturation of the electric polarization, leading to a high
energy density W
rec of ∼148 J/cm3 and a high energy efficiency η of
∼90%. Moreover, the (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 film capacitors retain their
high energy storage performance in a broad range of working temperature
(−175–300 °C) and operating frequency (1 Hz–20
kHz). They are also fatigue-free after up to 2 × 109 switching cycles. Our work provides a new method and a cost-effective
processing route for the creation and integration of high-performance
dielectric capacitors for energy storage applications.
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