Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current

Nomoto, Kazuki; Tajima, Taku; Mishima, Tomoyoshi; Satoh, Masataka; Nakamura, Tohru

doi:10.1109/led.2007.906930

Cited by 32 publications

(18 citation statements)

References 7 publications

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“…One of the applications of GaN is in a high electron mobility transistor (HEMT) with the structure of AlGaN/GaN, which has been the focus of many researchers as it can be successfully used in high speed, high power devices [2] [3]. Threshold voltage control in HEMTs is well known to be very difficult, as complicated processes such as recessed gate etching are needed [4].…”

Section: Introductionmentioning

confidence: 99%

Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

Kasai¹,

Oikawa²,

Mishima³

et al. 2017

MSCE

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This paper demonstrates that threshold voltages of GaN MISFET are controllable by varying the Mg ion doses for Mg ion implantation. Furthermore, it demonstrates for the first time that the short channel effect can be suppressed using a halo structure that has a p-layer in channel regions adjacent to source/ drain regions using tilt ion implantation. A device with a Mg dose of 8 × 10 13 /cm 2 achieved maximum drain current of 240 mA/mm and a transconductance of 40 mS/mm. These results indicate a definite potential for the use of our new process in GaN MISFETs for applications in power switching devices.

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Section: Introductionmentioning

confidence: 99%

Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

Kasai¹,

Oikawa²,

Mishima³

et al. 2017

MSCE

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“…The sheet resistance of the 2 DEG layer was 415 Ω/sq. The GaN cap layer on the AlGaN was grown to decrease gate leakage current and current collapse for AlGaN/GaN HEMTs [4]. Silicon ions were implanted into S/D regions in GaN/AlGaN/GaN HEMTs and resistor regions at an energy of 80 keV with ion dose of 1.25 × 10 15 /cm 2 .…”

Section: Introductionmentioning

confidence: 99%

High‐temperature operation of GaN‐based OPAMP on silicon substrate

Nomoto¹,

Hasegawa

Nakamura

2010

Phys. Status Solidi (c)

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We demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 200 °C. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion‐implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN was grown to decrease the gate leakage current and current collapse for AlGaN/GaN HEMTs. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…For GaN-based devices, however, high-temperature annealing ͑1 000-1 300°C͒ is necessary for effective activation of impurities in the donor or acceptor state and for recovery from implantation-induced crystalline defects. [1][2][3] Even if one utilizes a protection layer on the GaN surface, high-temperature annealing processes will cause electrical degradation of the surface associated with the decomposition ͑such as out diffusion of Ga and/or N atom͒ and/or unintentional impurity ͑such as carbon and oxygen͒ incorporation.…”

Section: Introductionmentioning

confidence: 99%

Effect of carbon incorporation on electrical properties of n-type GaN surfaces

Kimura

Hashizume

2009

Journal of Applied Physics

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We intentionally incorporated carbon into n-GaN by high-temperature annealing of a SiN x / CN x / GaN structure to study the effect of unintentional carbon incorporation on the electrical properties of n-type GaN surfaces. X-ray photoelectron spectroscopy results showed outdiffusion of Ga atoms from the GaN surface during high-temperature annealing even when the SiN x layer was present. The current-voltage characteristics showed a drastic increase in current in the forward and reverse directions of the Schottky diode in the carbon-incorporated sample. They also showed no temperature dependence from 150 to 300 K. The current-voltage curves of the carbon-incorporated samples in the forward and reverse directions could be almost completely reproduced by assuming an exponentially decaying distribution from the surface for shallow donors.

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Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current

Cited by 32 publications

References 7 publications

Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs

High‐temperature operation of GaN‐based OPAMP on silicon substrate

Effect of carbon incorporation on electrical properties of n-type GaN surfaces

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