High‐temperature operation of GaN‐based OPAMP on silicon substrate

Abstract

We demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 200 °C. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion‐implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN was grown to decrease the gate leakage current and current collapse for AlGaN/GaN HEMTs. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Novel AlInN/GaN integrated circuits operating up to 500°C

“…Therefore, they are expected to have a much better reliability and less pronounced surface and interface trapping effects. Moreover, very high 2D-electron concentration [4] can be achieved in latticed-matched AlInN/GaN heterostructures due to their much higher Al fraction (>80%). Typical sheet resistances for AlGaN/GaN and AlInN/GaN heterostructures were 280 X/sq and 200 X/sq, respectively.…”

“…The operation temperature of commercially available silicon-on-isolator ICs reaches 250-300°C [1] and is limited by fundamental material properties. Much higher operation temperatures can be achieved using wide band gap materials, such as silicon carbide and III-nitride compounds [2][3][4][5].…”

GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation

“…Monolithic integration of GaN‐based transistors is fascinating for engineers developing microintelligent power electronic systems. GaN‐based monolithic IC is also useful to promote frontiers of electronics in high temperatures and harsh radiation environments. To build electron circuits in IC, fabrication technology to enable a lot of transistors having different characteristics to be placed on the same chip is required.…”