Reliable electron-only devices and electron transport in n-type polymers

Abstract

Quantitative nanoscale monitoring the effect of annealing process on the morphology and optical properties of poly(3-hexylthiophene)/[6,6]-phenyl C 61 -butyric acid methyl ester thin film used in photovoltaic devices

Bulk Electron Transport and Charge Injection in a High Mobility n‐Type Semiconducting Polymer

“…[ 8 ] . Current-voltage ( J -V ) characteristics of devices comprising a fl at aluminum (Al) bottom electrode on poly(3,4-ethylenedioxythiophene):po ly(styrenesolfonate) (PEDOT:PSS) and a barium (Ba) top contact are shown in Figure 1 b .…”

“…We have recently discussed the experimental diffi culties related to the NDR effect and explained the origins of this effect. [ 8 ] In addition, a reliable method for the fabrication of electron-only devices was presented. Using this approach we showed the fi eld-and temperature dependence of the space-charge limited electron current ( J SCL ) in two well known n-type polymers to be determined by an exponential distribution of electron trap states.…”

Enhanced carrier transport in tris(8-hydroxyquinolinate) aluminum by titanyl phthalocyanine doping

“…[3][4][5] Functional devices based on conjugated polymers or small molecules such as light emitting diodes (OLEDs), organic solar cells (OSCs) and organic eld-effect transistors (OFETs) have great potential for light weight, exible and low-cost electronic and optoelectronic applications. 6 To obtain highly efficient and low-voltage OLEDs, the optimization of charge injection and carrier transport is critically important towards the improvement of device performances. 7,8 The doping of organic semiconductors was rst studied in the year 1960, 9 however they have been extensively studied aer their use in enhancing the charge carrier injection and transport properties in optoelectronic devices, [10][11][12][13][14][15] such as OLEDs and OSCs.…”

Electron and hole transport in poly(fluorene-benzothiadiazole)

“…On the other hand, Blakesley et al, 18 showed that the electron transport in F8BT can also be well described without trapping sites, using a Gaussian disorder model with 100 meV disorder, so similar to the width of trap energies as used in Ref. 17, showing that it is very hard to disentangle the two mechanisms. In the present study we determine the electron and hole mobilities in diodes of F8BT.…”

“…Regarding electron transport the intrinsic electron mobility in conjugated polymers is often masked by the presence of traps, giving rise to trap-limited currents. In a recent study by Steyrleuthner et al 17 the electron transport in F8BT diodes was modeled using the exponentional trapping model, with a typical trap width of about 100 meV. On the other hand, Blakesley et al, 18 showed that the electron transport in F8BT can also be well described without trapping sites, using a Gaussian disorder model with 100 meV disorder, so similar to the width of trap energies as used in Ref.…”