Reliability Study of Phase-Change Nonvolatile Memories

Pirovano, A.; Redaelli, A.; Pellizzer, F.; Ottogalli, F.; Tosi, M.; Ielmini, Daniele; Lacaita, A.L.; Bez, R.

doi:10.1109/tdmr.2004.836724

Cited by 247 publications

(150 citation statements)

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“…In particular, the last is a significant challenge in realizing multi-level storage 31,38 . Another consequence of this finding is that the simple extrapolation typically done for evaluating the retention time of stored information 39,40 needs to be corrected for the temporal slow-down of crystal growth upon drift.…”

Section: Discussionmentioning

confidence: 99%

Crystal growth within a phase change memory cell

2014

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In spite of the prominent role played by phase change materials in information technology, a detailed understanding of the central property of such materials, namely the phase change mechanism, is still lacking mostly because of difficulties associated with experimental measurements. Here, we measure the crystal growth velocity of a phase change material at both the nanometre length and the nanosecond timescale using phase-change memory cells. The material is studied in the technologically relevant melt-quenched phase and directly in the environment in which the phase change material is going to be used in the application. We present a consistent description of the temperature dependence of the crystal growth velocity in the glass and the super-cooled liquid up to the melting temperature.

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Section: Discussionmentioning

confidence: 99%

Crystal growth within a phase change memory cell

2014

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“…The stored data can be lost due to many mechanisms, including cell heterogeneity, programming noise, write disturbance, read disturbance, etc [1], [2]. From a longterm view, the change in data has an asymmetric property.…”

Section: Introductionmentioning

confidence: 99%

Error-correcting schemes with dynamic thresholds in nonvolatile memories

Zhou

Jiang

Bruck

2011

2011 IEEE International Symposium on Information Theory Proceedings

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Abstract-Predetermined fixed thresholds are commonly used in nonvolatile memories for reading binary sequences, but they usually result in significant asymmetric errors after a long duration, due to voltage or resistance drift. This motivates us to construct error-correcting schemes with dynamic reading thresholds, so that the asymmetric component of errors are minimized. In this paper, we discuss how to select dynamic reading thresholds without knowing cell level distributions, and present several error-correcting schemes. Analysis based on Gaussian noise models reveals that bit error probabilities can be significantly reduced by using dynamic thresholds instead of fixed thresholds, hence leading to a higher information rate.

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“…There have been various investigations on the improvement of the switching performance of GST [5][6][7][8][9][10][11][12]. Although many improvements have been made in reducing I res , there still remain several issues to be resolved and one of them is the device reliability during the repeated switching cycles; degradation or failure of PCRAM devices, such as reset and set stuck, and compositional variation of phase change material, have been reported [13][14][15][16]. It have been reported that SiO 2 doped Ge 2 Sb 2 Te 5 (SGST) leads to the reduction of I res by the improvement of thermal efficiency as well as the enhancement of the reliability by the increment of crystallization temperature [13,17].…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability of SiO₂Doped Ge₂Sb₂Te₅for Application in Phase Change Random Access Memory

Ryu¹,

Ahn²,

Lee³

et al. 2011

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Thermal stability of Ge 2 Sb 2 Te 5 (GST) and SiO 2 doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at 325 o C for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged.

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Reliability Study of Phase-Change Nonvolatile Memories

Cited by 247 publications

References 5 publications

Crystal growth within a phase change memory cell

Crystal growth within a phase change memory cell

Error-correcting schemes with dynamic thresholds in nonvolatile memories

Thermal Stability of SiO₂Doped Ge₂Sb₂Te₅for Application in Phase Change Random Access Memory

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Reliability Study of Phase-Change Nonvolatile Memories

Cited by 247 publications

References 5 publications

Crystal growth within a phase change memory cell

Crystal growth within a phase change memory cell

Error-correcting schemes with dynamic thresholds in nonvolatile memories

Thermal Stability of SiO2Doped Ge2Sb2Te5for Application in Phase Change Random Access Memory

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Thermal Stability of SiO₂Doped Ge₂Sb₂Te₅for Application in Phase Change Random Access Memory