Thermal Stability of SiO₂Doped Ge₂Sb₂Te₅for Application in Phase Change Random Access Memory

Abstract

Abstract-Thermal stability of Ge 2 Sb 2 Te 5 (GST) and SiO 2 doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at 325 o C for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged.