Reliability Study of Ferroelectric Al:HfO<sub>2</sub>Thin Films for DRAM and NAND Applications

Florent, Karine; Lavizzari, S.; Piazza, Luca; Popovici, Mihaela; Duan, Jingyu; Groeseneken, G.; Houdt, J. Van

doi:10.1109/ted.2017.2742549

Cited by 60 publications

(50 citation statements)

References 31 publications

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“…Furthermore, it can be described by two current peaks popping up at either direction of the current-voltage (I-V ) curve that might even merge to a single peak then resembling the standard distribution of coercive fields (E C ), as shown in Figure 1b. This behavior has been reported already by multiple groups [6,18,22,26,29,[31][32][33][34] and will be referenced to as the classical wake-up effect.…”

Section: Differences In the Wake-up Behavior Of Hafnium Oxidesupporting

confidence: 65%

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Lederer

Olivo

Lehninger

et al. 2021

Physica Rapid Research Ltrs

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Section: Differences In the Wake-up Behavior Of Hafnium Oxidesupporting

confidence: 65%

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Lederer

Olivo

Lehninger

et al. 2021

Physica Rapid Research Ltrs

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“…This initial-state behavior of TALD-HZO films is commonly observed, and 2P r gradually increases as the pinched hysteresis loop opens according to the cycles (known as the "wake-up effect"). [23,[39][40][41] After wakeup cycling, the increased 2P r remains stable and then decreases again as the number of cycles further increases (known as the "fatigue effect"). [23,[39][40][41] However, PEALD-HZO films experience much weaker wake-up and fatigue effects than TALD-HZO films due to plasma exposure, which reduces the amount of oxygen vacancies.…”

Section: Deposition Methods For Low-thermal-budget Ferroelectric Filmsmentioning

confidence: 99%

“…[23,[39][40][41] After wakeup cycling, the increased 2P r remains stable and then decreases again as the number of cycles further increases (known as the "fatigue effect"). [23,[39][40][41] However, PEALD-HZO films experience much weaker wake-up and fatigue effects than TALD-HZO films due to plasma exposure, which reduces the amount of oxygen vacancies. The small amounts of oxygen vacancies (defects) in PEALD-HZO films can also relatively enhance the breakdown strength.…”

Section: Deposition Methods For Low-thermal-budget Ferroelectric Filmsmentioning

confidence: 99%

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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Since the first report on the unexpected ferroelectricity of fluorite-structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical calculations and experimental demonstrations, it is now well known that fluorite-structure ferroelectrics are compatible with complementary metal-oxide-semiconductor technology and exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted that the noncentrosymmetric orthorhombic phase, which is responsible for ferroelectric behavior, is formed even at low temperatures (400 C or less). Herein, the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material are reviewed, focusing on thermal budget, especially the low-temperature annealing process for formation of the ferroelectric phase. These low-thermal-budget processes facilitate not only the integration of ferroelectric circuits in the back-end-of-line to increase the effective memory area and add more functionalities but also applications for flexible and wearable electronics.

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“…Therefore, to minimize the technical drawbacks of H 2 O oxygen precursor and properly use the doped HfO 2 thin films as ferroelectric gate insulators of the FeFETs, various control parameters such as deposition temperature, doping concentration, and annealing temperature have been investigated in previous reports. [ 8 ] Particularity, the crystallization annealing process is closely related to the formation of the ferroelectric phase within the film, which plays an important role in determining the characteristics of the ferroelectric gate insulator [2c,2d] . With the introduction of appropriate annealing conditions, values of ferroelectric remnant polarization (2 P r ) were obtained to be larger than 40 μC cm −2 for the doped HfO 2 thin films deposited by ALD process with H 2 O oxygen precursor [8e] .…”

Section: Introductionmentioning

confidence: 99%

Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO₂ Gate Insulator Deposited with H₂O Oxygen Precursor during Atomic Layer Deposition Process

Kim

Yoon

Kim

et al. 2021

Physica Status Solidi (a)

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Metal–ferroelectric–metal (MFM) capacitors with Pt‐/Al‐doped HfO2 (Al:HfO2)/TiN structures are characterized to demonstrate the ferroelectricity of the Al:HfO2 thin films deposited by atomic layer deposition with H2O precursor at various annealing conditions. When the crystallization annealing temperature increases from 750 to 850 °C, the value of ferroelectric remnant polarization (2Pr) increases from 11.5 to 17.1 μC cm−2 for the postmetallization annealing (PMA) process, whereas it increases from 8.1 to 11.4 μC cm−2 for the postdeposition annealing (PDA) process. The variations in crystallinity of Al:HfO2 and interfacial properties between the electrodes are analyzed to explore the physical origins to initiate the differences in electrical properties of the MFM capacitors. Using the Al:HfO2 thin film prepared with PMA at 850 °C as a ferroelectric gate insulator, which exhibits a maximum value of 2Pr and polarization switching time as short as 1 μs, the ferroelectric field‐effect transistors (FeFETs) are fabricated with metal–ferroelectric–metal–insulator–semiconductor gate stack. The memory on/off ratios are secured to be 2.6 × 104 and 2.0 × 104 after a lapse of retention time of 105 s and after repeated program operations of 104 cycles, respectively.

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Reliability Study of Ferroelectric Al:HfO₂Thin Films for DRAM and NAND Applications

Cited by 60 publications

References 31 publications

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO₂ Gate Insulator Deposited with H₂O Oxygen Precursor during Atomic Layer Deposition Process

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Reliability Study of Ferroelectric Al:HfO2Thin Films for DRAM and NAND Applications

Cited by 60 publications

References 31 publications

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process

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Product

Resources

About

Reliability Study of Ferroelectric Al:HfO₂Thin Films for DRAM and NAND Applications

Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO₂ Gate Insulator Deposited with H₂O Oxygen Precursor during Atomic Layer Deposition Process