Surface plasmon polaritons can confine electromagnetic fields in subwavelength spaces and are of interest for photonics, optical data storage devices and biosensing applications. In analogy to photons, they exhibit wave–particle duality, whose different aspects have recently been observed in separate tailored experiments. Here we demonstrate the ability of ultrafast transmission electron microscopy to simultaneously image both the spatial interference and the quantization of such confined plasmonic fields. Our experiments are accomplished by spatiotemporally overlapping electron and light pulses on a single nanowire suspended on a graphene film. The resulting energy exchange between single electrons and the quanta of the photoinduced near-field is imaged synchronously with its spatial interference pattern. This methodology enables the control and visualization of plasmonic fields at the nanoscale, providing a promising tool for understanding the fundamental properties of confined electromagnetic fields and the development of advanced photonic circuits.

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Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most of the published papers report on the study of this material through Metal-Insulator-Metal capacitors or Metal-Insulator-Silicon transistors. However, for 3D vertical transistors in which both the channel and gate are polysilicon, the case of silicon-based electrodes cannot be ignored. In this paper, we report the fabrication of various ferroelectric capacitors with silicon (S) based conductive layers and titanium nitride metal (M) electrodes using aluminum doped hafnium oxide (I). The ferroelectric device with silicon-based electrodes shows superior polarization and steeper switching. These results pave the way toward 3D integration for potential 3D NAND replacement.

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