Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling

Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Rampazzo, F.; Marcon, Daniele; Zhan, Verónica Gao; Chiocchetta, Francesca; Graff, Andreas; Altmann, Frank; Simon-Najasek, Michél; Poppitz, David

doi:10.1109/irps45951.2020.9128358

Cited by 7 publications

(1 citation statement)

References 28 publications

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“…[9] GaN microwave HEMTs have also unique reliability issues, related to material properties and epitaxial growth quality. [10][11][12][13][14][15] Figure 1 shows a schematic cross section of an AlGaN/GaN HEMTs and lists main failure mechanisms reported in the literature, which are shortly summarized in the following. The main goal of this paper is not to provide a comprehensive discussion on all the possible degradation mechanisms, but only to highlight some of the most recent findings that are relevant for state-of-the-art devices and for future development.…”

Section: Introductionmentioning

confidence: 99%

Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results

Zanoni

Rampazzo

Santi

et al. 2022

Physica Status Solidi (a)

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Herein, the results are reviewed concerning reliability of high‐electron mobility transistors (HEMTs) based on GaN, which currently represent the technology of choice for high‐efficiency microwave and millimeter‐wave power amplifiers. Several failure mechanisms of these devices are extensively studied, including converse piezoelectric effects, formation of conductive percolation paths at the edge of gate toward the drain, surface oxidation of GaN, time‐dependent breakdown of GaN buffer, and of field‐plate dielectric. For GaN HEMTs with scaled gate length, the simultaneous control of short‐channel effects, deep‐level dispersion, and hot‐electron‐induced degradation requires a careful optimization of epitaxial material quality and device design.

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