Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests

Zhan, G.; Chiocchetta, Francesca; Rampazzo, F.; Santi, Carlo De; Fornasier, Mirko; Meneghesso, G.; Meneghini, Matteo; Zanoni, Enrico

doi:10.1109/irps48203.2023.10118131

Cited by 2 publications

(1 citation statement)

References 25 publications

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“…Under a consistent voltage condition of V DS = 30 V, a high-temperature operating life (HTOL) test was executed for approximately 2000 h. This test encompassed three distinct channel temperatures: 210 • C, 225 • C, and 250 • C. The outcomes revealed a mean time to failure (MTTF) of 1.87 × 10 6 h at a temperature of 200 • C, along with activation energy (E a ) of 1.8 eV [44]. An accurate estimation of the channel temperature is of paramount importance for determining the precise mean time to failure (MTTF) values in GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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We present the mean time to failure (MTTF) of on-wafer AlGaN/GaN HEMTs under two distinct electric field stress conditions. The channel temperature (Tch) of the devices exhibits variability contingent upon the stress voltage and power dissipation, thereby influencing the long-term reliability of the devices. The accuracy of the channel temperature assumes a pivotal role in MTTF determination, a parameter measured and simulated through TCAD Silvaco device simulation. Under low electric field stress, a gradual degradation of IDSS is noted, accompanied by a negative shift in threshold voltage (ΔVT) and a substantial increase in gate leakage current (IG). Conversely, the high electric field stress condition induces a sudden decrease in IDSS without any observed shift in threshold voltage. For the low and high electric field conditions, MTTF values of 360 h and 160 h, respectively, were determined for on-wafer AlGaN/GaN HEMTs.

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Section: Introductionmentioning

confidence: 99%

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Chakraborty,

Kim

2023

Micromachines

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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Xie,

Niroula,

Rajput

et al. 2024

Applied Physics Letters

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This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

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Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests

Cited by 2 publications

References 25 publications

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

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