Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

“…It is worth noting that, while for p-type epitaxial material the interface state density D it in the lower part of the gap is often lower than near the conduction band edge, [21][22][23] this value can increase by the introduction of nitrogen at the interface (by nitridation annealing or implantation). 21,24 In addition, in our case, besides employing nitridation annealing, the measurement was done on p-type implanted material, which is known to exhibit higher D it than the epitaxial one.…”

Interface between Al2O3and 4H-SiC investigated by time-of-flight medium energy ion scattering

“…This is generally not the case and non-perfect interfaces from today's SiC technology typically result in low channel mobility and poor reliability of 4H-SiC MOSFETs. Subsequent annealing of SiO 2 in NO or N 2 O is commonly used to improve the interface and, to some extent, eliminate electron traps [12][13][14]. As important as the choice of dielectric material is, the method of deposition and the passivation of electronic defects at the interface is a proper treatment of the SiC surface before forming a dielectric layer.…”

Non uniform thermal oxidation of SiC and its impact on electrical characteristics

“…SiC MOSFETs require a higher reliability than Si MOSFETs since they need stable operation under higher temperature and electric field. [9][10][11] In Si devices, it has been reported that, as thermally grown SiO 2 films become thinner, the oxide surface and interface become rougher, and as a result, thickness uniformity decreases on an atomic scale. 12) Furthermore, the dielectric lifetime becomes dispersive, and the slope of the Weibull plots of time-dependent dielectric breakdown (TDDB) lifetimes of gate SiO 2 films decreases as the films become thinner.…”