Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Abstract

The conduction mechanisms and trapping effects at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors (MOSFETs) were studied by Fowler-Nordheim (FN) tunnelling and frequency dependent conductance measurements. In particular, the analysis of both MOS capacitors and MOSFETs fabricated on the same wafer revealed an anomalous FN behavior on p-type implanted SiC/SiO2 interfaces. The observed FN instability upon subsequent voltage sweeps was correlated to the charge-discharge of hole trap states close the valence band edge of 4H-SiC. The charge-discharge of these traps also explained the recoverable threshold voltage instability observed in lateral MOSFETs.

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

“…Paulsen et al 25 where ϕB is the energy discontinuity between the semiconductor and the oxide, m1* and m2* are the effective masses for electrons in the oxide and semiconductor (because at the flat band voltage the negatively charged NIOTs release electrons via-tunnelling toward the semiconductor) respectively, and Ef, is the position of the Fermi level in the semiconductor. Furthermore, Dit is the interface state density close to the 4H-SiC valence band edge (for the details see the supplementary material S.2 referring to 19 ), ħ is the reduced Plank constant. Using the values of Dit reported in S.2 and the literature values of m1* and m2* 26 , Eq.…”

Electronic Properties of Stacked ZrO2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

“…The presence of the FN tunneling under high field is typical for thermally grown SiO 2 layers known from literature [7]. The barrier height has been extracted from the slope of the ln(J/E 2 ) versus 1/E plot (shown in Fig.…”

Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling

“…where m ox h = 0.536 m 0 is the effective mass of hole in the oxide [12,13], q is the magnitude of electron charge, h is the reduced Planck's constant, vðyÞ is the correction term [27] due to image force barrier lowering with normalized barrier lowering term…”

“…conduction mechanism [5,[11][12][13] from the accumulation layer of 6H-SiC and 4H-SiC. As SiC based MOS devices operate in a hostile environment like high oxide electric field and high temperature, high-field stress-induced degradation of the SiC based devices is an important reliability issue for further investigations.…”