Reliability of InGaAs/InP long-wavelength p-i-n photodiodes passivated with polyimide thin film

Kuhara, Y.; Terauchi, H.; Nishizawa, H.

doi:10.1109/jlt.1986.1074785

Cited by 26 publications

(7 citation statements)

References 8 publications

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“…For the fitting of degradation curves, the polynomial function has been employed to describe the aging behaviors of both lasers (Sim, 1989;Huang et al, 2005) and photodiodes (Kuhara et al, 1986). Typically, the sublinear model provides more accurate fit.…”

Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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Avalanche photodiodes (APDs) are important building blocks for high-sensivity, low-noise receivers deployed in the datacenter, wireless and cloud computing networks. Maintaining stable dark current is a crucial task for overall robust sysem reliability. To achieve design-in low dark current stability, good knowledge of reliability physics is indispensable. In this work, we study the physical mechanisms of 10G/25G mesa-type APD degradation. We institute a predictive reliability model to account for the degradation processes. A comprehensive comparison of APD and IC transistor is also illustrated in terms of dielectric breakdown, mobile ion migration and hot carrier injection. The model suggests that surface leakage current is the dominant factor for the mesa-type APD degradation. Based on the model, it is predicted that highly reliable 10G/25G APD can be achieved with the suppression of weak links at the surface/interface states.

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Section: Resultsmentioning

confidence: 99%

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Huang¹,

Jan²,

Chen³

et al. 2016

APR

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“…The dark current of the s.n.28 assembly increased by several orders of magnitude during monitoring. This showed very little correlation with environmental parameters, and was attributed to the formation of parasitic leakage channels along the passivation layers of the AFPM junction [6]. However, dark current variations do not directly affect the absorptionreflectivity properties of the voltage-driven modulator, and therefore do not affect either the photocurrent characteristic (photo-generated portion of the total leakage current), which is proportional to the absorbed power, or the transcharacteristic, which is proportional to the reflected power.…”

Section: Characterizationmentioning

confidence: 99%

Time stability of asymmetric Fabry-Perot modulator-based analog lightwave links

Cervelli

Grabit²,

Persello³

et al. 1997

J. Lightwave Technol.

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Lightwave links for analog signal transfer are being developed and evaluated for application in high-density interconnects. The reflective links are based on compact electro-optic intensity modulators connected by ribbons of single-mode fibres to remotely located transceivers (lasers and photoreceivers) and read-out electronics. For long-term characterization, four Asymmetric Fabry-Perot Modulator (AFPM) prototypes were continuously operated and monitored over a period of eight months. The collected data allow evaluation of the system time stability and simulation of the possible recalibration procedures. The recalibration requirements to achieve the desirable accuracy and reliability are inferred statistically.

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“…5). It has been suggested that these type of defects occur at metal-rich precipitates, some of which occur at crystal dislocations [5]- [7]. The cause of the gradual reduction in breakdown voltage, on the other hand, is not known explicitly, but presumably involves the field-assisted and/or temperatureassisted drift of some impurity species or defects to localized sites in the pn junction.…”

Section: B Eds Analysismentioning

confidence: 99%

“…This author also used bias temperature tests and the light-beam induced current method to evaluate lifetime and analyze the failure modes of InP/InGaAs APD's [5], [6]. Kuhara likewise investigated the long-term reliability of InGaAs/InP photodiodes passivated with polyimide films [7], and Bauer and Trommer performed a similar investigation on devices passivated with silicon nitride [8]. Finally, Skrimshire et al performed accelerated life tests on both mesa and planar InGaAs photodiodes for comparison purposes [9].…”

Section: Introductionmentioning

confidence: 99%

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

Yun

Menkara

Wang

et al. 1997

IEEE Trans. Electron Devices

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The effect of various doping methods on the reliability of gallium arsenide/aluminum gallium arsenide (GaAs/AlGaAs) multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance (ANOVA) shows that dark current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time, and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped-well and doped-barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verifies the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APD's. This effect is explained by dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage (C C C-V V V) technique.

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Reliability of InGaAs/InP long-wavelength p-i-n photodiodes passivated with polyimide thin film

Cited by 26 publications

References 8 publications

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Predictive Reliability Model of 10G/25G Mesa-Type Avalanche Photodiode Degradation

Time stability of asymmetric Fabry-Perot modulator-based analog lightwave links

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

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