Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon

Liu, Alan Y.; Herrick, Robert W.; Ueda, Osamu; Petroff, P. M.; Gossard, A. C.; Bowers, John E.

doi:10.1109/jstqe.2015.2418226

Cited by 111 publications

(92 citation statements)

References 68 publications

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“…It should be noted that these data represent worst case results since (i) the laser was operated epitaxial side up, (ii) the laser was not hard soldered to a high thermal conductivity heat-sink, and (iii) no facet coatings were used. Nevertheless, the estimated lifetime is much longer than the best reported extrapolated MTTF of 4,627 hours for a p-doped InAs/GaAs QD laser grown on Ge-on-Si ÔvirtualÕ substrate 23 . If the standard industrial techniques described above were used, even better lifetime performance is expected.…”

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confidence: 75%

“…As shown in Figure 1b and c, a Figure 1b and c also reveal that the threading dislocation can be either pinned or propelled away from QDs. Therefore, the strong strain field of a QD array also prevents the in-plane motion of dislocations, and therefore superior reliability is expected from QD lasers compared with QW or bulk devices, even in the presence of high-density dislocations 22,23 .These unique properties of QDs provide a promising route towards monolithic III-V on silicon (III-V/Si) integration. As shown in Figure 1a, III-V QD lasers grown on silicon are rapidly approaching the performance of those grown on native GaAs substrates 24,25 .…”

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confidence: 99%

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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

et al. 2016

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Reliable, efficient electrically pumped silicon-based lasers would enable full integration of photonic and electronic circuits, but have previously only been realized by wafer bonding. Here, we demonstrate the first continuous-wave InAs/GaAs quantum-dot lasers directly grown on silicon substrates with a low threshold current density of 62.5 A/cm 2 , a room-temperature output power exceeding 105 mW, lasing operation up to 120 o C, and over 3,100 hours of continuous-wave operating data collected, giving an extrapolated mean time to failure of over 100,158 hours. The realization of highperformance quantum-dot lasers on silicon is due to the achievement of a low density of threading dislocations on the order of 10 5 cm -2 in the III-V epilayers by combining a nucleation layer and dislocation filter layers with in-situ thermal annealing. These results are a major advance towards silicon-based photonics and photonic-electronic integration, and could provide a route towards reliable and cost-effective monolithic integration of III-V devices on silicon.Increased data throughput between silicon processors in modern information processing demands unprecedented bandwidth and low power consumption beyond the capability of conventional copper interconnects. To meet these requirements, silicon photonics has been under intensive study in recent years 1,2 . Despite rapid progress being made in silicon-based light modulation and detection technology and low-cost silicon optoelectronic integrated devices enabled by the mature CMOS technology 3,4 , an efficient reliable electrically pumped laser on a silicon substrate has remained an unrealized scientific challenge 5 . Group IV semiconductors widely used in integrated circuits, e.g. silicon and germanium, are inefficient light-emitting materials due to their indirect bandgap, introducing a major barrier to the development of silicon photonics. Integration of IIIÐV materials on a silicon platform has been one of the most promising techniques for generating coherent light on silicon. IIIÐV semiconductors with superior optical properties, acting as optical gain media, can be either bonded or epitaxially grown on silicon substrates [6][7][8][9][10][11] , with the latter approach being more attractive for large scale, low-cost, and streamlined fabrication. However, until now, material lattice mismatch and incompatible thermal expansion coefficients between IIIÐV materials and silicon substrates have fundamentally limited the monolithic growth of IIIÐV lasers on silicon substrates by introducing high-density threading dislocations (TDs) 12 .Lasers with active regions formed from III-V quantum dots (QDs), nano-size crystals, can not only offer low threshold current density (J th ) but also reduced temperature sensitivity [13][14][15][16][17] . As shown in Figure 1a, within less than 10 years, the performance of QD lasers has surpassed state-of-the-art quantum-well (QW) lasers developed over the last few decades in terms of J th . QD lasers have now been demonstrated with nearly constan...

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Electrically pumped continuous-wave III–V quantum dot lasers on silicon

et al. 2016

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“…The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL. Quantum dot laser is a promising approach, as it seems to degrade less rapidly under the presence of non-radiative defects [18] [19]. Hetero-epitaxial growth of GaNAsP/GaBP based laser diode lattice matched on Si circumvents the formation of misfit dislocation (MD) but bears new challenges due to the complexity of the involved new material systems such as dilute nitrides…”

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III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

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et al. 2016

Applied Physics Letters

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We report on a new integration approach of III/V nano ridges on patterned Silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different width (≤ 500nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells (MQWs) with 19 % Indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical application. Transmission electron microcopy (TEM) investigation shows that very flat QW interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL. Quantum dot laser is a promising approach, as it seems to degrade less rapidly under the presence of non-radiative defects [18] [19]. Hetero-epitaxial growth of GaNAsP/GaBP based laser diode lattice matched on Si circumvents the formation of misfit dislocation (MD) but bears new challenges due to the complexity of the involved new material systems such as dilute nitrides

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“…38 Further testing of the same devices showed extrapolated lifetimes of 4600 h at aging conditions of 30 • C and more than twice the threshold. 39 These performance results and later results by Chen et al in 2016 showing 62.5 A/cm 2 current densities and extrapolated lifetimes >100 000 h at relaxed conditions 40 began to make the case that QD lasers grown on Si can be a commercial technology. The only problem is that none of these results made use of CMOS compatible on-axis (001) silicon substrates.…”

Section: Apl Photonics 3 030901 (2018)mentioning

confidence: 87%

Perspective: The future of quantum dot photonic integrated circuits

et al. 2018

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Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

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Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon

Cited by 111 publications

References 68 publications

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Perspective: The future of quantum dot photonic integrated circuits

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