Reliability of hybrid-drain-embedded gate injection transistor

Tanaka, Kenichiro; Morita, Tatsuo; Ishida, M.; Hatsuda, Tetsuo; Ueda, T.; Yokoyama, Kenichi; Ikoshi, Ayanori; Hikita, Masahiro; Toki, Masahiro; Yanagihara, Manabu; Uemoto, Yasuhiro

doi:10.1109/irps.2017.7936308

Cited by 52 publications

(9 citation statements)

References 21 publications

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“…The high-voltage GaN device also has parasitic p-n junction diodes formed between gate-source terminals and gate-drain terminals. In the proposed model, the internal parasitic diodes are modeled as simple p-n junction diodes with forward and reverse conduction [25], [31]- [32]. The main components of the model that determine the dc and C-V/charge behavior are described in the following subsections.…”

Section: Model Formulation and Analytical Expressionsmentioning

confidence: 99%

“…It is found that the junction temperature does not affect the device capacitances in the temperature range of interest for power devices, and thus the model is not adjusted to involve the temperature dependent device characteristics for capacitance measurements. The effect of the junction temperature is mainly observed in the carrier mobility, dc transfer characteristics, on-resistance, and device threshold voltage [32], [34]- [38]. These effects are characterized in the analytical model, as expressed in the following manner.…”

Section: Temperature Dependent Device Behaviormentioning

confidence: 99%

“…x r (32) where the temperature dependent drift resistance is given by R dri f t (T j ) and x r is a fitting parameter given by…”

Section: Temperature Dependent Device Behaviormentioning

confidence: 99%

“…The dc transfer related parameters are extracted for (29) and (30). The other temperature-dependent parameters are extracted for (28), (32), and (33). The simulated vs. measured device dc output characteristics at room temperature and 150 °C are shown in Fig.…”

Section: Model Parameter Extraction From Measured Device Characteristics a Extraction Of Parameters For DC Modelmentioning

confidence: 99%

See 3 more Smart Citations

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Kotecha

Hossain

Rashid

et al. 2021

IEEE Open J. Power Electron.

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This work presents a physics-based compact GaN device model that can predict the performance characteristics of a wide range of GaN devices for power electronics applications. The model has been validated against the measured characteristics of a 650 V commercially available GaN device. The higher voltage range devices exhibit quasi-saturation on-state behavior due to drift resistance, which is evident from their on-state behavior. Also, higher voltage GaN devices have significant nonlinear capacitance characteristics due to the presence of field plates connected to the source and gate terminals. The field plates are fabricated to improve the electric-field distribution in the channel. The field plates result in significant nonlinearity in the channel capacitance that can be quantified as successive depletion in the device capacitances. The model accurately captures these phenomena in the dc and C-V device characteristics. The model also captures the third-quadrant behavior of all GaN devices with model parameters that are decoupled from the first quadrant while maintaining continuity between the first and third quadrants. Dynamic validation of the model is performed from the double-pulse test. The proposed model can be used to characterize commercially available high-voltage GaN devices that can be used in power electronic applications and design.INDEX TERMS Circuit simulations, compact modeling, device characterization, gallium nitride, power electronics, power semiconductor devices, wide bandgap semiconductors.

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Section: Model Formulation and Analytical Expressionsmentioning

confidence: 99%

Section: Temperature Dependent Device Behaviormentioning

confidence: 99%

“…x r (32) where the temperature dependent drift resistance is given by R dri f t (T j ) and x r is a fitting parameter given by…”

Section: Temperature Dependent Device Behaviormentioning

confidence: 99%

Section: Model Parameter Extraction From Measured Device Characteristics a Extraction Of Parameters For DC Modelmentioning

confidence: 99%

See 2 more Smart Citations

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Kotecha

Hossain

Rashid

et al. 2021

IEEE Open J. Power Electron.

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“…Among the few commercially available packaged device options, p-gate type gate injection transistors (GIT) have been demonstrated in previous works to offer excellent performance in application, to show very good promise for high robustness and longer term reliability, while requiring some specific gate-driver design features for best operation [1][2][3][4]. Recently, a hybrid-drain (HD) GIT device has been introduced, which significantly advances well known issues related to current collapse in GaN HEMT technology [5]. The specific device under analysis in this work is the PGA26E19BA transistor, with a nominal DC current rating of 13 A [6].…”

Section: Introductionmentioning

confidence: 99%

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

Fayyaz

Castellazzi

2018

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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This paper proposes the design and prototype development and testing of a gate-driver which enables to jointly optimize the performance in application of gate-injection type high electron mobility transistors, taking into account a number of diverse operational conditions, including nominal and abnormal events. The results show that it is possible to optimize the gate-driver parameters in such a way as to ensure optimum switching and free-wheeling performance, while ensuring enhanced short-circuit robustness.

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Introduction to Gallium Nitride Properties and Applications

Roccaforte

Leszczyński

2020

Nitride Semiconductor Technology

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Reliability of hybrid-drain-embedded gate injection transistor

Cited by 52 publications

References 21 publications

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

Compact Modeling of High-Voltage Gallium Nitride Power Semiconductor Devices for Advanced Power Electronics Design

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

Introduction to Gallium Nitride Properties and Applications

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