Introduction to Gallium Nitride Properties and Applications

Roccaforte, Fabrizio; Leszczyński, M.

doi:10.1002/9783527825264.ch1

Cited by 22 publications

(22 citation statements)

References 117 publications

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“…Their wide bandgap and high stability make them a perfect material for high-power and high frequency transistors present in the market. For those reasons, the term "GaNification" was created for the revolution expected in modern electronics and opto-electronics [10]. In our view, and by analogy, a change of paradigm can be expected from GaN-based X-ray detector technology for the development of GaN-based devices described above.…”

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

“…In 2000, the nature of the 2DEG was further clarified by Ibbetson et al [9], attributing a key role to the surface states present in nitride materials as source of electrons. A listed historical summary can be found by Roccaforte and Leszczynski [10]. Binary AlN/GaN HEMTs are preferably grown by plasma-assisted molecular beam epitaxy (PA-MBE), as well as metal-organic chemical vapour deposition (MOCVD), which is also known as metal-organic chemical vapour phase epitaxy (MOCVPE) [11,12].…”

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

“…and V. of the main group, they are called III-V semiconductors. A 2DEG is inherently present in the AlGaN/GaN heterostructure, the presence of which is the basis for the operating principle of HEMT devices [10]. HEMT devices were structured from 3µm thick Ga-face GaN films that were grown by MOCVD (TopGaN Ltd., Warsaw, Poland) on a 330 µm thick c-plane sapphire substrate, followed by a 2.8 µm GaN layer, a 25 nm Al 0.25 Ga 0.75 N layer, a 3nm nominally undoped GaN capping layer, and an 88 nm isolation layer.…”

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

“…When using the energy band model, the piezoelectric polarization and the resulting internal electric fields occurring in the AlGaN/GaN interface cause the conduction band to bend below the Fermi level, resulting in the accumulation of free electrons in a potential well (Figure 5). Typically, the 2DEG is characterized by sheet carrier density values in the order of 10 13 cm −2 and mobility in the range of 1000-2000 cm 2 /Vs [10].…”

Section: Gan/algan Hemt-2deg Intrinsic Intensifiermentioning

confidence: 99%

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GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

et al. 2022

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Direct conversion of X-ray irradiation using a semiconductor material is an emerging technology in medical and material sciences. Existing technologies face problems, such as sensitivity or resilience. Here, we describe a novel class of X-ray sensors based on GaN thin film and GaN/AlGaN high-electron-mobility transistors (HEMTs), a promising enabling technology in the modern world of GaN devices for high power, high temperature, high frequency, optoelectronic, and military/space applications. The GaN/AlGaN HEMT-based X-ray sensors offer superior performance, as evidenced by higher sensitivity due to intensification of electrons in the two-dimensional electron gas (2DEG), by ionizing radiation. This increase in detector sensitivity, by a factor of 104 compared to GaN thin film, now offers the opportunity to reduce health risks associated with the steady increase in CT scans in today’s medicine, and the associated increase in exposure to harmful ionizing radiation, by introducing GaN/AlGaN sensors into X-ray imaging devices, for the benefit of the patient.

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Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

Section: Gan Manufacture and Ganificationmentioning

confidence: 99%

Section: Gan/algan Hemt-2deg Intrinsic Intensifiermentioning

confidence: 99%

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GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

et al. 2022

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Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers

Sirotti,

Böhm,

Sharp

2024

Adv Materials Inter

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Zinc nitride (Zn3N2) is a promising semiconductor for a range of optoelectronic and energy conversion applications, offering a direct bandgap of 1.0 eV, large carrier mobilities, and abundant constituent elements. However, the material is prone to bulk oxidation in ambient environments, which has thus far impeded its practical deployment. While previous approaches have focused on stabilizing the material via integration of ZnO surface layers, these strategies introduce additional challenges regarding elevated processing temperatures and limited control of interface properties. In this study, it is shown that amorphous GaN thin films can serve as highly stable protection layers on Zn3N2 surfaces and can be deposited at the same growth temperature and in the same deposition system as the underlying semiconductor. The GaN‐capped Zn3N2 structures exhibit long‐term stability, surviving over 3 years of exposure to ambient conditions with no discernible alterations in composition, structure, or electrical properties. Notably, the amorphous GaN coatings can even impede Zn3N2 oxidation under prolonged aqueous exposure. Thus, this study offers a solution to stabilize Zn3N2 in ambient conditions, providing a viable pathway to its utilization in robust and high‐performance electronic devices, such as thin film transistors and solar energy conversion systems.

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Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes

Mondal,

Xiong,

Ghimire

et al. 2024

Advanced Optical Materials

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Solar blind ultraviolet (UV) photodetectors utilizing AlGaN/GaN high electron mobility transistor (HEMT) structure offer a very high responsivity, photo‐to‐dark current ratio (PDCR), and detectivity. However, the performance of conventional mesa‐isolated photo‐HEMT is limited due to current leakage paths through the side wall and AlGaN barrier. In this work, apart from conventional mesa‐type isolation, ion implantation and metal‐insulator‐semiconductor (MIS) schemes are adopted to isolate the channels of AlGaN/GaN photo‐HEMTs. A significant reduction in dark current is achieved for MIS photo‐HEMT of around four and three orders of magnitude as compared to those of conventional mesa‐ and ion‐implanted photo‐HEMTs, respectively. Moreover, the responsivity and PDCR of MIS photo‐HEMT are around three and four orders of magnitude higher than those of conventional mesa‐isolated photo‐HEMT. Subsequently, MIS photo‐HEMT on Si substrate has achieved a very high detectivity of 4.63 × 1016 Jones at the UV incidence wavelength of 360 nm. The results presented in this work establish the advantages of MIS photo‐HEMT over other types of photo‐HEMTs. In addition, compatibility with GaN device fabrication technology and significantly enhanced optoelectronic performance suggest AlGaN/GaN MIS photo‐HEMTs as a promising candidate for a variety of advanced UV sensing applications.

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Introduction to Gallium Nitride Properties and Applications

Cited by 22 publications

References 117 publications

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers

Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes

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Introduction to Gallium Nitride Properties and Applications

Cited by 22 publications

References 117 publications

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm

Ultrastable Zn3N2 Thin Films via Integration of Amorphous GaN Protection Layers

Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes

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Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers