P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

Wu, Han; Fayyaz, Asad; Castellazzi, Alberto

doi:10.1109/ispsd.2018.8393645

Cited by 12 publications

(9 citation statements)

References 7 publications

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“…This is a favorable property for short protection circuits. The gate circuit design is a key point at which to monitor and control fault conditions [52,53]. The gate driver protections must be set to occur in a few microseconds.…”

Section: Discussionmentioning

confidence: 99%

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

et al. 2021

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The efficiency and power density improvement of power switching converters play a crucial role in energy conversion. In the field of motor control, this requires an increase in the converter switching frequency together with a reduction in the switching legs’ dead time. This target turns out to be complex when using pure silicon switch technologies. Gallium Nitride (GaN) devices have appeared in the switching device arena in recent years and feature much more favorable static and dynamic characteristics compared to pure silicon devices. In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues. In this work, primarily an experimental evaluation of GaN FETs in a low voltage electrical drive is carried out. The experimental investigation is obtained through two different experimental boards to highlight the switching legs’ behavior in several operative conditions and different implementations. In this evaluative approach, the main GaN FETs’ technological aspects and issues are recalled and consequently linked to motion control requirements. The device’s fast switching transients combined with reduced direct resistance contribute to decreased power losses. Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable. The reduced dead time impact on power loss management and improvement of output waveforms quality is analyzed and discussed in this paper. Furthermore, input filter capacitor design matters correlated with increasing switching frequency are pointed out. Finally, the voltage transients slope effect (dv/dt) is considered and correlated with low voltage motor drives requirements.

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Section: Discussionmentioning

confidence: 99%

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

et al. 2021

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“…The equivalent-circuit model in Figure 8 was used to model the measured S-parameters of the studied device. The equivalent-circuit parameters (ECPs) were extracted as described in [15], using the well-known "cold" pinch-off approach that has been widely and successfully applied to the GaN technology over the years [46][47][48][49][50]. The effect of T a on the measured S-parameters at the selected bias point is shown in Figure 9.…”

Section: Sensitivity-based Analysis Of Small-signal Parameters and Rf...mentioning

confidence: 99%

“…Ni-Au or Pt metals were used to form the Schottky barrier [23,48,49]. In insulate gated d-mode HEMT, an insulating layer is placed in between the gate electrode and AlGaN similar to that of MOSFET to block the gate current [50]. Schottky gate and insulated gate d-mode HEMTs are shown in Figure 3.…”

Section: The Influence Of Different Substrates On Gan Hemt Devicementioning

confidence: 99%

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

2022

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“…Zero voltage turn-on and negative turn-off voltage were utilized to reach >99% efficiency. A fast GaN HEMT driving circuit was designed for Panasonic PGA26E19BA with a voltage clamped to achieve optimized switching performance, freewheeling conduction, and short-circuit robustness [ 50 ]. The manufacturer-recommended driving circuit design was modified by adding a diode-resistor network that helped the capacitor on the driving path quickly discharge as well as provided more flexibility in gate resistor design.…”

Section: Review On Gan Hemt Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

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P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

Cited by 12 publications

References 7 publications

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

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