Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasers

Mizuishi, K.; Sawai, Masaaki; Todoroki, S.; Tsuji, S.; Hirao, M.; Nakamura, M.

doi:10.1109/jqe.1983.1072019

Cited by 35 publications

(7 citation statements)

References 12 publications

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“…The small decreases may result from a current-induced annealing effect. Similar changes in the threshold currents have been observed and reported for long-lifetime 1.3 .tm InGaAsP/lnP lasers [10]. Therefore, the above result is likely an indication that lasers with the present structure are promising for practical applications.…”

Section: Theoretical Analysissupporting

confidence: 88%

High-yield single-mode operation of 1.55μm strained-layer multi-quantum-well DFB lasers using mixed-index/gain-coupling structure

1993

SPIE Proceedings

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Section: Theoretical Analysissupporting

confidence: 88%

High-yield single-mode operation of 1.55μm strained-layer multi-quantum-well DFB lasers using mixed-index/gain-coupling structure

1993

SPIE Proceedings

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“…Note, however, that to check on the validity of the last statement we must establish uniqueness of the relation between the dynamics of laser aging and the initial 1/f noise level, even if the dominant factor is degradation of the electronic structure of the lasers and not of the cavity mirrors or other elements. An attempt to observe such a correlation for GaAIAs lasers in an investigation of a total of 40 laser diodes with shallow and deep mesastripes, and the use as of LF noise normalized to the WlC effectiveness as a parameter, yielded a correlation not larger than 30% between the service life and the initial level of the 1/f noise (we used accelerated testing at a constant power 3 mW, and lasers were regarded as degraded when the threshold current increased by 1.5 times and more after 300 h of preconditioning at 70-80~ Nonetheless, in buried heterolasers with deep mesastructures this correlations may turn out to be appreciably higher, since the lateral leakages are one of the main mechanisms that determine the operating lifetime [25][26]. It may turn out, however, that selection of lasers on the basis of the threshold current is already adequately effective, for in this case the laser diodes chosen have a sufficiently low loss level.…”

Section: Discussionmentioning

confidence: 99%

“…The presence of defects of this type is customarily regarded as the cause of the increase of the current flowing through the structures in the small-forward-bias regime [25,26]. It is therefore useful to consider the possible influence of lateral leakage over the surfaces of mesa structures on the 1/f noise of InGaAsP emitters, since this type of source is quite widespread in practice [27].…”

Section: Lateral Leakage In Deep Ingaasp Mesastructuresmentioning

confidence: 99%

Analysis of low-frequency fluctuation of the radiation power of injection lasers

Garmash¹,

Zverkov²,

Kornilova³

et al. 1989

J Russ Laser Res

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A typical feature of the noise characteristics of injection lasers is the appearance, at low frequencies, of a noise spectrum in which the spectral density of the fluctuations (SDF) has a frequency dependence of type I/if, where a = 1 [1][2][3][4][5][6]. The presence of noise of this kind was observed also in light-emitting diodes and in superluminescent diodes [7]. Analysis of the available published experimental data shows that a strong scatter is observed in the measured values of this excess low-frequency (LF) noise in emitters of various types. So far, however, no real investigations capable of revealing the cause and determining the level of the excess LF noise and its scatter have been performed. We have found only one cycle of studies of this kind, by N. B. Luk'yanchikova et al. [8][9][10], who carried out such an investigation for light-emitting diodes in GaAs and GaP systems. They have shown that the excess noise with a spectrum of the i/f type observed in such devices is due to the so-called excess currents that manifest themselves at low bias by a deviation of the current--voltage characteristic (IVC) from the diffusive dependence I = I s exp(eV/(1-2)kT), where I s is the saturation current. It was indicated in [10] that excess currents are observed also in GaAs homolasers and can determine the level of the 1/f noise in the latter. No further experimental research, however, has been carried out along these lines.As to theoretical simulation of the noise characteristics of lasers in the LF region, the available reports [11][12] of an analysis based on the model of Voss and Clarke [11] or by using the Hooge hypothesis [12], contain neither a comparison of the results of analysis of known experimental data, nor an explanation of the observed scatter of the experimental data or a calculation of the Hooge parameters on their basis.The aim of the present paper is an exposition of the experimental results of an analysis of the relation between the excess LF I/f-type fluctuations of injection-laser power (and of several types of light-emitting diodes) with their radiative and electric characteristics. We shall present the result of an investigation of LF noise of GaAIAs heterolasers with shallow and deep stripes and of terraced lasers [16], as well as buried InGaAsP heterolasers with ridged waveguides. It will be shown that in the laser diodes at our disposal the excess LF noise is determined by the excess currents discussed above, which are nonradiating. A correlation with the level of the excess current was observed up to cases in which the frequency, at which the SDF begins to increase above white noise, amounted to 3 kHz in single-frequency lasers with laterally restricted beams, the lowest value known in the literature. A simplified theoretical analysis of the results will be carried out in light of the present nottons concerning the causes of 1/f noise in semiconductor devices. In addition, data obtained from the experimental analysis will be given concerning certain specific causes of the onset of LF n...

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“…However, this makes soft solder subject to thermal fatigue and creep rupture, causing long-term reliability problems (Solomon, 1986;Lau & Rice, 1985). They are also attributed to solder instabilities like whisker growth, void formation at the bonding part, and diffusion growth (Mizuishi et al, 1983(Mizuishi et al, , 1984Sabbag &McQueen, 1975 and obstruct its optical beam. As mentioned earlier, the laser diode package will experience elevated temperature during operation.…”

Section: Thermal Interface Materialsmentioning

confidence: 99%

Advances in High-Power Laser Diode Packaging

Ronnie¹

2012

Semiconductor Laser Diode Technology and Applications

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Reliability in InGaAsP/InP buried heterostructure 1.3 µm lasers

Cited by 35 publications

References 12 publications

High-yield single-mode operation of 1.55μm strained-layer multi-quantum-well DFB lasers using mixed-index/gain-coupling structure

High-yield single-mode operation of 1.55μm strained-layer multi-quantum-well DFB lasers using mixed-index/gain-coupling structure

Analysis of low-frequency fluctuation of the radiation power of injection lasers

Advances in High-Power Laser Diode Packaging

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