Advances in High-Power Laser Diode Packaging

Ronnie, Teo Jin Wah

doi:10.5772/37581

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…The intertwining process divided the lamellar Sn-rich phase into a spheroidized structure. This structure transformation has a good effect on the mechanical properties of the solder [26] .…”

Section: ↔ ↔ ↔ ↔mentioning

confidence: 98%

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Lin¹,

Li²,

Zhang³

et al. 2020

J. Semicond.

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Au80Sn20 alloy is a widely used solder for laser diode packaging. In this paper, the thermal resistance of GaN-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method. The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance. It was found that the microstructure with a higher content of Au-rich phase in the center of the solder and a lower content of (Au,Ni)Sn phase at the interface of the solder/heat sink resulted in lower thermal resistance. This is attributed to the lower thermal resistance of Au-rich phase and higher thermal resistance of (Au,Ni)Sn phase.

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Section: ↔ ↔ ↔ ↔mentioning

confidence: 98%

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Lin¹,

Li²,

Zhang³

et al. 2020

J. Semicond.

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“…Furthermore, heat dissipation characteristics can be improved compared to LED packages using wire bonding because heat is directly emitted to the substrate though a solder. 14,15) Au-20 wt%Sn solder has been widely studied as a FC LED bonding material. Au-20 wt%Sn solder has the advantages of low melting point, high intensity, high thermal conductivity and lower long-term LED junction temperature.…”

Section: Introductionmentioning

confidence: 99%

Effect of (Ni, Au)₃Sn₄ growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages

Lee

Kang

Yoo

et al. 2020

Jpn. J. Appl. Phys.

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In this study, the effect of growth of intermetallic compound (IMC) layer between Au-20 wt% Sn solder and electroless Ni/immersion Au (ENIG) on the thermal resistance of a flip-chip (FC) light emitting diode (LED) package was investigated. Two IMC layers were formed at the interface of FC LED package, including Au5Sn and (Ni, Au)3Sn4 that were identified using a transmission electron microscopy. A thermal aging test was carried out at 200 °C for 1000 h to observe IMCs growth. After 1000 h, the (Ni, Au)3Sn4 thickness increased to about 1.5 μm and the thermal resistance of the FC LED package increased by 3.5 times compared to the initial thermal resistance of 2 K W−1. As the (Ni, Au)3Sn4 grew, a calculation of thermal resistance also increased comparing to the initial aging test, thus, the growth of (Ni, Au)3Sn4 layer can be effective factor on the increase of thermal resistances of FC LED package.

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Enabling Next-generation Gbps Full-duplex Communications Systems Applying Radio- and Power-over-Fiber Integration

Souza,

Andrade,

Pinto

et al. 2024

Optics Communications

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Advances in High-Power Laser Diode Packaging

Cited by 4 publications

References 25 publications

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Effect of (Ni, Au)₃Sn₄ growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages

Enabling Next-generation Gbps Full-duplex Communications Systems Applying Radio- and Power-over-Fiber Integration

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Advances in High-Power Laser Diode Packaging

Cited by 4 publications

References 25 publications

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes

Effect of (Ni, Au)3Sn4 growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages

Enabling Next-generation Gbps Full-duplex Communications Systems Applying Radio- and Power-over-Fiber Integration

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Product

Resources

About

Effect of (Ni, Au)₃Sn₄ growth on the thermal resistance of Au-20 wt% Sn solder/ENIG joint in flip-chip LED packages