2006
DOI: 10.1109/dac.2006.229181
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Reliability challenges for 45nm and beyond

Abstract: Scaling, for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits. This will require that designers will have to be very careful with: high current densities, voltage overshoots, localized hot spots on the chip, high duty-cycle applications, and high thermalresistance packaging.In addition to the reliability issues, interconnect RC time-delay will worsen with scaling because Cu resistivity is expected to increase due to surface and grain … Show more

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Cited by 29 publications
(31 citation statements)
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“…[1][2][3] With nearly 30+ years of continual CMOS scaling, existing CMOS materials have now been pushed to their physical and reliability limits. Presently, at the 45-65nm nodes, gate oxide thickness is ~ 1.2nm [4] and with a leakage of ~ 100 A/cm 2 at 1.0V [5].…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3] With nearly 30+ years of continual CMOS scaling, existing CMOS materials have now been pushed to their physical and reliability limits. Presently, at the 45-65nm nodes, gate oxide thickness is ~ 1.2nm [4] and with a leakage of ~ 100 A/cm 2 at 1.0V [5].…”
Section: Introductionmentioning
confidence: 99%
“…For an application consisting of multiple interconnected tasks, the overall reliability and the mean time between failures (MTBF) are given by (8) where N a is the number of tasks and R i (t) is the reliability of task i. The above equation is derived based on the assumption that transient fault occurrences are independent of each other and an application is successful when all tasks of the application executes successfully.…”
Section: A Transient Fault-tolerancementioning
confidence: 99%
“…An area of growing concern in multiprocessor design is concerning error free execution of an application on the platform. Shrinking transistor geometries, growing transistor density and aggressive voltage scaling is negatively impacting the dependability of semiconductor devices by increasing the probability of transient, intermittent and permanent faults [7], [8]. The existing studies on reliability-aware application mapping suffer from the following limitations.…”
Section: Introductionmentioning
confidence: 99%
“…Numerous parasitic and timing effects may show up in the first silicon [4], identifying them is part of silicon debug. With growing circuit complexity and shrinking geometries, the actual behavior of the silicon is hard to model [5], [6], [7] and cannot always be predicted and simulated [8].…”
Section: A Debug and Diagnosismentioning
confidence: 99%