Reliability assessment of deep trench isolation structures

Moens, P.; Coppens, P.; Baele, J.; Bauwens, F.; Boonen, Sylvie; Vleeschouwer, Herbert De; Pestel, F. De; Tack, M.

doi:10.1109/relphy.2005.1493150

Cited by 8 publications

(2 citation statements)

References 13 publications

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“…There are many examples reported about DTI. [8][9][10][11][12][13][14][15][16][17]28) SOI technology is also shown to be effective for isolation in the vertical direction. [18][19][20][21][22][23][24][25][26][27] In this work, we introduce the unified impedance model to analyze the breakdown voltage of various isolation structures.…”

Section: Introductionmentioning

confidence: 99%

Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface

Takeuchi¹,

Kuroda²,

Sugawa³

2015

Jpn. J. Appl. Phys.

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We analyzed the shared voltages of multiple trench gaps on a silicon-on-insulator (SOI) substrate and showed the conditions for improving the breakdown voltage surrounded by these isolated structures. We introduced a unified impedance model instead of the capacitive model of trench gaps and determined the effective conditions for improving the breakdown voltage. The first condition is to reduce the impedance of trench gaps. In this case, the leak current gives a low limit of trench gap resistance. The second condition is to increase the substrate resistance. As silicon substrate resistance is not very high, this condition is not useful for the silicon substrate, but for other materials such as ceramics. We confirmed the effectiveness of these conditions from the simulation and experimental results of a fabricated chip.

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Section: Introductionmentioning

confidence: 99%

Analysis of breakdown voltage of area surrounded by multiple trench gaps in 4 kV monolithic isolator for communication network interface

Takeuchi¹,

Kuroda²,

Sugawa³

2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Compared with PN junction isolation, deep trench structure on SOI substrate shows a lot of advantages, such as minimal space consumption, bi-directional isolation, lower leakage current, higher stopping latch-up performance and stronger temperature tolerance in smart power applications [1][2][3]. In recent years, the isolation characteristics of deep trench have been published in many literatures.…”

Section: Introductionmentioning

confidence: 99%