Process-induced charge trapping and junction breakdown instability in deep trench isolation for high voltage Smart Power IC process

Breakdown voltage walkout resulting from hot‐carrier‐induced interface states in n‐type LDMOS transistors

“…It has been reported that BVdss walkout (BVdss increase) is observed after either repeated BVdss measurements [1][2][3] or hot-carrier stress [4], leading to BVdss instability. Previous literatures [1][2][3][4] mentioned that the physical mechanism leading to BVdss walkout is the reduced local electric field near the breakdown point. Such a field reduction is caused by avalanche breakdown or hot-carrier-induced injected oxide charge or interface states (N IT ).…”