Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs

Jauss, S. A.; Hallaceli, Kazim; Mansfeld, Sebastian; Schwaiger, Stephan; Daves, Walter; Ambacher, O.

doi:10.1109/ted.2017.2682931

Cited by 30 publications

(14 citation statements)

References 20 publications

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“…In this regard, Hua et al [197] reported on the superior properties of LPCVD-SiN x in terms of the leakage currents, breakdown field and TDDB lifetime. Similar investigations were performed by Jauss et al [198], who predicted a 20-year 100 ppm lifetime at 130 • C for a gate voltage of 10.1 V. However, the high deposition temperature of more than 700 • C for LPCVD-SiN x can instead degrade the GaN surface in recessed-gate structures employed for normally off operations [48]. To overcome this issue, Hua et al [48] successfully employed an interface protection technique consisting of a SiN x interface layer deposited by PECVD prior to the high-temperature deposition process of LPCVD-SiN x .…”

Section: Nitride-based Dielectricssupporting

confidence: 87%

Feature Papers in Electronic Materials Section

2022

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Section: Nitride-based Dielectricssupporting

confidence: 87%

Feature Papers in Electronic Materials Section

2022

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“…For the GaN-based MIS HEMTs using Al 2 O 3 , SiN x and AlTiO, it has been reported that the Poole-Frenkel (PF) emission conduction was dominant for gate leakage current. [22][23][24][25] In the same way as the V TH recovery, decrease in defect levels in the Al 2 O 3 layer is responsible for the reduction of leakage current, contributing to the suppression of the PF hopping conduction.…”

mentioning

confidence: 99%

Improved operation stability of Al₂O₃/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

Ando

Kaneki

Hashizume

2019

Appl. Phys. Express

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This paper presents electrical characterization of Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (HEMTs) grown on GaN substrates. The postmetallization annealing (PMA) at 300 °C achieved effective reduction of electronic states at the Al2O3/AlGaN interface, leading to improved gate controllability and current linearity of the MOS HEMTs. The MOS HEMT with PMA showed a subthreshold slope of 68 mV dec−1. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures. Even at 150 °C, the HEMT showed low leakage current of 1.5 × 10−9 A mm−1 and a threshold voltage drift of only 0.25 V from its room temperature value.

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“…The gate failure in most of these MIS-HEMTs shows the TDDB behavior [208]- [210]. A 20 years lifetime (100 pm, 130 o C) extrapolation is reported for a 0.2 mm 2 gate area at positive gate voltage of 9.4 V [202].…”

Section: A Gate Lifetimementioning

confidence: 97%

“…For commercial D-mode GaN MIS-HEMTs used in directdrive and Cascode devices, very few gate lifetime studies have been reported except for the good HTGB qualification data from vendors. Most publications of MIS-HEMTs are based on research devices with nitride dielectrics [202]- [205] or Al2O3 [206] as the gate insulator [207]. The gate failure in most of these MIS-HEMTs shows the TDDB behavior [208]- [210].…”

Section: A Gate Lifetimementioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs

Cited by 30 publications

References 20 publications

Feature Papers in Electronic Materials Section

Feature Papers in Electronic Materials Section

Improved operation stability of Al₂O₃/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

Stability, Reliability, and Robustness of GaN Power Devices: A Review

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Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs

Cited by 30 publications

References 20 publications

Feature Papers in Electronic Materials Section

Feature Papers in Electronic Materials Section

Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates

Stability, Reliability, and Robustness of GaN Power Devices: A Review

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Improved operation stability of Al₂O₃/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates