Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet

Castellazzi, Alberto; Gerstenmaier, Y.C.; Kraus, R.; Wachutka, G.

doi:10.1109/tpel.2006.872382

Cited by 62 publications

(21 citation statements)

References 17 publications

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“…This error can be estimated using the following formula: (5) In turn, in the optical method, the measuring error of the temperature Tj − obtained by a thermo-hunter or an infrared camera − provided by the producer is typically ∆Tj = 2 K. The resolution of such instruments is near 0.1 K. Additionally, the error connected with inaccurate estimation of emissivity ε of the examined surface is:…”

Section: Analysis Of the Error Of The Measurement Methodsmentioning

confidence: 99%

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Górecki

2015

Metrology and Measurement Systems

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In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

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Section: Analysis Of the Error Of The Measurement Methodsmentioning

confidence: 99%

The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Górecki

2015

Metrology and Measurement Systems

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“…There are several methods of achieving this, the graphical method, curve fitting and deconvolution [28,30]. The obtained thermal resistances and capacitances make up the Foster network.…”

Section: Structure Functionmentioning

confidence: 99%

Prognostic System for Power Modules in Converter Systems Using Structure Function

Aliyu

Castellazzi

2018

IEEE Trans. Power Electron.

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This paper proposes an on-board methodology for monitoring the health of power converter modules in drive systems, using vector control heating and structure function to check for degradation. It puts forward a system that is used on-board to measure the cooling curve and derive the structure function during idle times for maintenance purposes. The structure function is good tool for tracking the magnitude and location of degradation in power modules. The ability to keep regular track of the actual degradation level of the modules enables the adoption of preventive maintenance, reducing or even eliminating altogether the appearance of failures during operation, significantly improving the availability of the power devices. The novelty in this work is the complete system that is used to achieve degradation monitoring; combining the heating technique and the measurement without additional power components except the measurement circuit which can be integrated into the gate drive board and the challenges encountered. Experimental results obtained from this show that it is possible to implement an on-board health monitoring system in converters which measures the degradation on power modules.

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“…2). The voltage source provides such a voltage across the capacitor that the product of voltage and capacitance results in the required value of the charge [27]. The temperature dependence of the SiC-MOSFET is considered by describing the variation of the model parameters with temperature.…”

Section: Further Model Componentsmentioning

confidence: 99%