The Analysis Of Accuracy Of Selected Methods Of Measuring The Thermal Resistance Of IGBTs

Metrology and Measurement Systems

et al. 2016

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This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.

Section: Measurement Resultsmentioning

confidence: 96%

“…The ability of removing heat generated in an electronic device can be characterized − among others − by the thermal resistance Rth or the transient thermal impedance Zth(t) [11,12]. The values of these parameters depend on the construction of cooling system of the device [8,13,14], the device case being its essential component [14,15].…”

Section: Introductionmentioning

confidence: 99%

Examinations of Selected Thermal Properties of Packages of SiC Schottky Diodes

Bisewski

Myśliwiec

Metrology and Measurement Systems

et al. 2016

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“…In this range, we observe an electrothermal breakdown Górecki, 2009, 2010); it means that the dynamic output resistance of the transistor changes its sign from positive to negative. The differences observed in Figure 4 between the results of calculations and measurements probably are a result of the known dependence of the device thermal resistance on the dissipated power (Górecki and Górecki, 2015). This dependence is omitted in the considered model to obtain convergence of calculations.…”

Section: Investigations Resultsmentioning

confidence: 97%

“…where, t OX ϭ thickness of the layer SiO 2 ; C GCO ϭ gate-drain capacitance for the unit of the channel length; In turn, the thermal model contains the controlled current source G th representing the power dissipated in the transistor, the voltage source T a representing the ambient temperature and the RC network modelling transient thermal impedance of the investigated transistor (Górecki and Górecki, 2015).…”

Section: Model Formmentioning

confidence: 99%

Modelling dynamic characteristics of the IGBT with thermal phenomena taken into account

2017

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Purpose This paper aims to propose the electrothermal dynamic model of the insulated gate bipolar transistors (IGBT) for SPICE. Design/methodology/approach The electrothermal model of this device (IGBT), which takes into account both electrical and thermal phenomena, is described. Particularly, the sub-threshold operation of this device is considered and electrical, and thermal inertia of this device is taken into account. Attention was focused on the influence of electrical and thermal inertia on waveforms of terminal voltages of the considered transistor operating in the switching circuit and on waveforms of the internal temperature of this device. Findings The correctness of the presented model is verified experimentally and a good agreement of the calculated and measured electrical and thermal characteristics of the considered device is obtained. Research limitations/implications The presented model can be used for different types of IGBT, but it is dedicated for SPICE software only. Originality/value The form of the worked out model is presented and the results of experimental verification of this model are shown.

“…The accuracy of indirect electrical methods of measuring thermal parameters of the IGBT is analysed in [27,34]. Based on the considerations presented in the cited papers, the following analytical formula describing the relative error of measurements of thermal resistance R thT can be obtained.…”

Section: Measurement Methodsmentioning

confidence: 99%

Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case

2021

Electronics

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This article proposes effective methods of measurements and computations of internal temperature of the dies of the Insulted Gate Bipolar Transistor (IGBT) and the diode mounted in the common case. The nonlinear compact thermal model of the considered device is proposed. This model takes into account both self-heating phenomena in both dies and mutual thermal couplings between them. In the proposed model, the influence of the device internal temperature on self and transfer thermal resistances is taken into account. Methods of measurements of each self and transfer transient thermal impedances occurring in this model are described and factors influencing the measurement error of these methods are analysed. Some results illustrating thermal properties of the investigated devices including the IGBT and the antiparallel diode in the common case are shown and discussed. Computations illustrating the usefulness of the proposed compact thermal model are presented and compared to the results of measurements. It is proved that differences between internal temperature of both dies included in the TO-247 case can exceed even 15 K.