Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

Gorelkin, V. N.; Grebinnik, V. G.; Gritsai, K. I.; Duginov, V. N.; Жуков, В. А.; Mamedov, T. N.; Ol'Shevskǐ, V. G.; Pomyakushin, V. Yu.; Stoikov, A. V.; Chaplygin, I.; Krivosheev, I. A.; Nikol'skii, B.A.; Ponomarev, A. N.

doi:10.1134/1.567065

Jetp Lett.

1996

DOI: 10.1134/1.567065

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Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

V. N. Gorelkin

V. G. Grebinnik

K. I. Gritsai

et al.

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Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon

Cited by 3 publications

References 6 publications

Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments

Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments

Investigation of acceptor centers in semiconductors by means of negative muons

Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon

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