Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments

Baturin, A. S.; Gorelkin, V. N.; Rastunkov, V. S.; Soloviev, V. R.

doi:10.1016/j.physb.2005.11.091

Cited by 13 publications

(13 citation statements)

References 12 publications

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“…The possibility to extract valuable information about the hyperfine structure and interactions with a lattice of acceptor centers in different semiconductors with the help of negative muons was shown in the works [16][17][18][19]. Recently, µ − SRresearch of synthetic diamond crystals were carried out in [20][21][22][23]. We will examine evolution in time of radiation defects induced by negative muons in the following, taking in mind that they are the same for negative pions, as well.…”

Section: Introductionmentioning

confidence: 99%

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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Evolution in time of radiation defects induced by negatively-charged pions and muons in crystals with diamond structures is considered. Negative pions and muons are captured by the nucleus and ionize an appropriate host atom, forming a positively-charged radiation defect in a lattice. As a result of an evolution in time, this radiation defect transforms into the acceptor center. An analysis of the full evolution process is considered for the first time. Formation of this acceptor center can be divided into three stages. At the first stage, the radiation defect interacts with a radiation trace and captures electrons. The radiation defect is neutralized completely in Si and Ge for a short time t ≤ 10 −11 s, but in diamond, the complete neutralization time is very large t ≥ 10 −6 s. At the second stage, broken chemical bonds of the radiation defect are restored. In Si and Ge, this process takes place for the neutral radiation defect, but in diamond, it goes for a positively-charged state. The characteristic time of this stage is t < 10 −8 s for Si and Ge and t < 10 −11 s for diamond. After the chemical bonds' restoration, the positively-charged, but chemically-bound radiation defect in diamond is quickly neutralized because of the electron density redistribution. The neutralization process is characterized by the lattice relaxation time. At the third stage, a neutral chemically-bound radiation defect captures an additional electron to saturate all chemical bonds and forms an ionized acceptor center. The existence of a sufficiently big electric dipolar moment leads to the electron capture. Qualitative estimates for the time of this process were obtained for diamond, silicon and germanium crystals. It was sown that this time is the shortest for diamond (≤10 −8 s) and the longest for silicon (≤10 −7 s)

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Section: Introductionmentioning

confidence: 99%

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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“…Так, при исследо-вании алмаза мюонным методом [6,7] были получены результаты, которые могли объясняться возникновением у носителей заряда абсолютной отрицательной подвиж-ности (АОП), при которой носители в среднем дви-гаются против приложенного электрического поля [8][9][10][11]. Предполагалось, что возможная АОП в алмазе связана с сильной неупругостью рассеяния носителей заряда на акустических фононах, вызванной рекордной скоростью звука в алмазе, при температурах порядка 10 К [12]. На первом этапе этих исследований в по-чти упругом, диффузионно-дрейфовом приближении [12] была, следуя [13], введена характеристика носителей с заданной энергией, которая первоначально считалась подвижностью таких носителей.…”

Section: Introductionunclassified

“…Предполагалось, что возможная АОП в алмазе связана с сильной неупругостью рассеяния носителей заряда на акустических фононах, вызванной рекордной скоростью звука в алмазе, при температурах порядка 10 К [12]. На первом этапе этих исследований в по-чти упругом, диффузионно-дрейфовом приближении [12] была, следуя [13], введена характеристика носителей с заданной энергией, которая первоначально считалась подвижностью таких носителей. Эта функция при неко-торых энергиях частиц оказывалась отрицательной и приводила к возможности существования интегральной АОП.…”

Section: Introductionunclassified

О Подвижности Носителей Заряда Определенной Энергии

Белоусов¹,

Горелкин²,

Черноусов³

2018

Физика И Техника Полупроводников

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The quasi-mobility function of charge carriers with a specified energy for describing their dynamics using the kinetic equation is studied in the important case of two-term isotropic approximation. In the stationary case, the quasi-mobility function is independent of the source function of charge carriers and makes it possible to calculate the integral mobility. The correlation between the quasi-mobility and parameters of the system is analyzed. It is proved that this characteristic does not generally describe the contribution of charge carriers with a specified energy to the integral mobility. In the case of almost elastic scattering, the quasi-mobility, as is known, can have a clear physical meaning; however, in the case of the scattering of charge carriers at acoustic phonons in a solid, this quasi-mobility interpretation is found to be incorrect due to the specific features of the collision integral and the form of the quasi-mobility function.

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“…Specific feature of diamond at temperature in the range 10 -30 K is the possibility of an absolute negative conductivity of embedded carriers [5][6][7]. The qualitative explanation of this phenomenon is that carriers with very small ki-netic energy can only absorb lattice acoustic phonons, but cannot emit them due to violation of the energy conservation law.…”

mentioning

confidence: 99%

“…One obtains at the above cited value of the laser peak intensity w (5) ∼ 4000 s −1 . Thus, the part of the ionized atoms during the pulse duration τ is w (5) τ ∼ 4×10 −9 . The number density of atoms n in diamond is well known: n = 1.75 × 10 23 cm −3 .…”

mentioning

confidence: 99%

On the possibility of an absolute negative conductivity of diamond at the irradiation by picosecond laser pulse

Rastunkov¹,

Крайнов²

2007

Laser Phys. Lett.

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We investigate one of the possibilities for production of carriers in diamond resulting in its absolute negative conductivity at low temperatures T ∼ 10 – 30 K. Production and dynamics of electrons and holes in diamond at the irradiation by picosecond laser pulse with the peak laser intensity of 1010 W/cm2 has been considered and compared to each other. Then carriers are cooled due to emission of acoustic phonons. Diamond heating is estimated in focussing region. The conclusion has been made about small local increasing of lattice temperature in the irradiation region. Thus, laser irradiation can produce conditions for possible experimental observation of an absolute negative conductivity of diamond at low temperatures.

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Absolute negative mobility of charge carriers in diamond and interpretation of μSR experiments

Cited by 13 publications

References 12 publications

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

О Подвижности Носителей Заряда Определенной Энергии

On the possibility of an absolute negative conductivity of diamond at the irradiation by picosecond laser pulse

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