Dynamics of charge carriers at the place of the formation of a muonic atom in diamond and silicon

Antipov, Sergey; Belousov, Yu. M.; Solov’ev, V. R.

doi:10.1134/s1063776112090026

Cited by 5 publications

(7 citation statements)

References 17 publications

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“…The obtained value confirms the validity of the assumption on the kinetics of a charged radiation defect ( µ B) + thermalization reported in [24]. The hybridization rate (53) is two orders of magnitude less than the rate of a non-hybridized charged center formation.…”

Section: Formation Of Neutral Center ( µ B C 4 ) 0 In Diamondsupporting

confidence: 76%

“…This process takes short a time, t ∼ 10 −14 s. After the ionization, free electrons lose their energy; for a while, it will be of the order of the forbidden gap energy. This is a diffusion process, when ionized impurities and host atoms are neutralized, and it takes respectively a long time t ≤ 10 −10 s. All of these findings were obtained as a result of a numerical modeling of a neutralization process of muonic atoms in a kinetic approximation for diamond and silicon crystals with different concentrations of impurities [24].…”

Section: Interaction With the Tracementioning

confidence: 65%

“…At the second stage, the center with a compensated charge restores broken chemical bonds with a lattice and then forms an acceptor center. Now, we will outline briefly the main results of the first stage and show the difference between diamond and other diamond structure crystals following [24]. After that, we will consider the second stage in more detail.…”

Section: Introductionmentioning

confidence: 99%

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Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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Evolution in time of radiation defects induced by negatively-charged pions and muons in crystals with diamond structures is considered. Negative pions and muons are captured by the nucleus and ionize an appropriate host atom, forming a positively-charged radiation defect in a lattice. As a result of an evolution in time, this radiation defect transforms into the acceptor center. An analysis of the full evolution process is considered for the first time. Formation of this acceptor center can be divided into three stages. At the first stage, the radiation defect interacts with a radiation trace and captures electrons. The radiation defect is neutralized completely in Si and Ge for a short time t ≤ 10 −11 s, but in diamond, the complete neutralization time is very large t ≥ 10 −6 s. At the second stage, broken chemical bonds of the radiation defect are restored. In Si and Ge, this process takes place for the neutral radiation defect, but in diamond, it goes for a positively-charged state. The characteristic time of this stage is t < 10 −8 s for Si and Ge and t < 10 −11 s for diamond. After the chemical bonds' restoration, the positively-charged, but chemically-bound radiation defect in diamond is quickly neutralized because of the electron density redistribution. The neutralization process is characterized by the lattice relaxation time. At the third stage, a neutral chemically-bound radiation defect captures an additional electron to saturate all chemical bonds and forms an ionized acceptor center. The existence of a sufficiently big electric dipolar moment leads to the electron capture. Qualitative estimates for the time of this process were obtained for diamond, silicon and germanium crystals. It was sown that this time is the shortest for diamond (≤10 −8 s) and the longest for silicon (≤10 −7 s)

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Section: Formation Of Neutral Center ( µ B C 4 ) 0 In Diamondsupporting

confidence: 76%

Section: Interaction With the Tracementioning

confidence: 65%

Section: Introductionmentioning

confidence: 99%

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Evolution in Time of Radiation Defects Induced by Negative Pions and Muons in Crystals with a Diamond Structure

Belousov

2017

Crystals

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“…To confirm the suggestion on a fast neutralization of a radiation defect, calculations of electron capture by a charged radiation defect, formed by a negative muon in silicon and diamond crystals [21,22], were performed. The calculations in [22] have shown that the kinetics of electron capture by a positively charged radiation defect in silicon and diamond is essentially different.…”

Section: States Of the ( μ B) + Center In A Latticementioning

confidence: 92%

“…The calculations in [22] have shown that the kinetics of electron capture by a positively charged radiation defect in silicon and diamond is essentially different. In silicon, a radiation defect is capturing the necessary number of electrons for a short time period t b 10 −10 s for neutralization, which confirms the qualitative estimates.…”

Section: States Of the ( μ B) + Center In A Latticementioning

confidence: 98%