Relaxation and crystallization of amorphous silicon carbide probed by optical measurements

Musumeci, Paolo; Reitano, R.; Calcagno, L.; Roccaforte, Fabrizio; Makhtari, A.; Grimaldi, Maria Grazia

doi:10.1080/01418639708241097

Cited by 72 publications

(43 citation statements)

References 17 publications

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“…Indeed, for these films, annealing induces a shift in peak position from 765 cm À1 to about 795 cm À1 , accompanied by a strong narrowing of the signal from 210 to $40 cm À1 . The strong narrowing of the FTIR spectra with annealing has been observed by several authors [7,31,37,[52][53][54] and has been attributed to film densification [55] while others have reported the formation of nano-crystallites observed by TEM [37,56]. The decrease in FWHM of our films grown at low temperature indicates that annealing induces a reduction in bond angle distortions and bond length variations along with an enhancement of the SiC bonding, as further supported by the upward-shift in peak position of the films.…”

Section: Effect Of Annealingsupporting

confidence: 72%

Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

Tabbal

Said

Hannoun

et al. 2007

Applied Surface Science

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Section: Effect Of Annealingsupporting

confidence: 72%

Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

Tabbal

Said

Hannoun

et al. 2007

Applied Surface Science

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“…amorphous Si-C bond distribution [33][34][35][36]. Thus, the fit function can be written as where ( ) is the area of the peak, ( ) is the peak position, and ( ) is the FWHM of the Lorentz (Gaussian) peak.…”

Section: Sample Characterizationmentioning

confidence: 99%

Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures

Weiss

Schnabel

Reichert

et al. 2015

Applied Surface Science

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The outstanding demonstration of quantum confinement in Si nanocrystals (Si NC) in a SiC matrix requires the fabrication of Si NC with a narrow size distribution. It is understood without controversy that this fabrication is a difficult exercise and that a multilayer (ML) structure is suitable for such fabrication only in a narrow parameter range. This parameter range is sought by varying both the stoichiometric SiC barrier thickness and the Si-rich SiC well thickness between 3 and 9 nm and comparing them to single layers (SL). The samples processed for this investigation were deposited by plasma-enhanced chemical vapor deposition (PECVD) and subsequently subjected to thermal annealing at 1000-1100 degrees C for crystal formation. Bulk information about the entire sample area and depth were obtained by structural and optical characterization methods: information about the mean Si NC size was determined from grazing incidence X-ray diffraction (GIXRD) measurements. Fourier-transform infrared spectroscopy (FTIR) was applied to gain insight into the structure of the Si-C network, and spectrophotometry measurements were performed to investigate the absorption coefficient and to estimate the bandgap E-04. All measurements showed that the influence of the ML structure on the Si NC size, on the Si-C network and on the absorption properties is subordinate to the influence of the overall Si content in the samples, which we identified as the key parameter for the structural and optical properties. We attribute this behavior to interdiffusion of the barrier and well layers. Because the produced Si NC are within the target size range of 2-4 nm for all layer thickness variations, we propose to use the Si content to adjust the Si NC size in future experiments

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“…Fig. 4 shows the refractive index spectra n(E) for the indicated values of T s and reproduces also the n(E) plot for monocrystalline cubic β-SiC [10]. Two main features can be noticed from the evolution of n(E) against T s : (i) n(E) increases with T s all along the spectral range and approaches continously the n(E) spectrum of β-SiC, (ii) the n(E) peak shifts towards high energies when T s is increased.…”

Section: Resultsmentioning

confidence: 83%

“…1 consist in a mixture of Gaussian and Lorentzian components that can be determined after deconvolution, aiming at providing an estimate of the crystalline fraction, f c . According to an earlier reported approach [10], f c is evaluated from f c = L/(L+G), L and G being the area of the Lorentzian and the Gaussian components, respectively. Fig.…”

Section: Resultsmentioning

confidence: 99%

Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application

Colder¹,

Marie²,

Pichon³

et al. 2004

phys. stat. sol. (c)

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International audienceSilicon carbide thin layers have been obtained by reactive magnetron sputtering in a hydrogen-rich plasma at substrate temperatures, Ts, varying between 200°C and 600°C. The analysis of the infrared absorption spectra reveal an abrupt transition from amorphous phase to a crystalline fraction fc exceeding 30% when Ts is increased to 300°C. The fc value continues to increase for higher values of Ts. The evolutions of the optical parameters deduced from the modeling of the spectroscopic ellipsometry spectra are quite consistent with the observed structural change. The increase of the refractive index reflects the improvement of both crystallinity and compactness of the layers, while the crystallized SiC samples appear more absorbent than monocrystalline SiC. The heterojunction diodes fabricated from the deposition of our layers on c-Si wafers have shown good rectifying behavior, as well as a low leakage current

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Relaxation and crystallization of amorphous silicon carbide probed by optical measurements

Cited by 72 publications

References 17 publications

Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

Structural and optical properties of silicon nanocrystals embedded in silicon carbide: Comparison of single layers and multilayer structures

Hydrogenated nanocrystalline silicon carbide: fabrication, properties and heterostructure device application

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